Abstract: A substrate processing system includes a processing chamber, a substrate support, a laser, and a collimating assembly. The substrate support is disposed in the processing chamber and is configured to support a substrate. The laser is configured to generate a laser beam. The collimating assembly includes lenses or mirrors arranged to direct the laser beam at the substrate to heat an exposed material of the substrate. The lenses or mirrors are configured to direct the laser beam in a direction within a predetermined range of being perpendicular to a surface of the substrate.

Abstract: Methods, systems, apparatuses, and computer programs are presented for controlling plasma discharge uniformity using magnetic fields. A substrate processing apparatus includes a vacuum chamber with a processing zone for processing a substrate. The apparatus further includes a magnetic field sensor to detect a first signal representing an axial magnetic field and a second signal representing a radial magnetic field associated with the vacuum chamber. The apparatus includes at least two magnetic field sources to generate an axial supplemental magnetic field and a radial supplemental magnetic field through the processing zone of the vacuum chamber. The apparatus includes a magnetic field controller coupled to the magnetic field sensor and the at least two magnetic field sources. The magnetic field controller adjusts at least one characteristic of one or more of the axial supplemental magnetic field and the radial supplemental magnetic field based on the first signal and the second signal.

Abstract: An ALE system for performing a metal ALE process to etch a surface of a substrate includes a processing chamber, a substrate support, a heat source, a delivery system, and a controller. The substrate support is disposed in the processing chamber and supports the substrate. The delivery system supplies a ligand or organic species to the processing chamber. The controller controls the delivery system and the heat source to perform an isotropic metal ALE process that includes: during an iteration of the isotropic metal ALE process, performing atomistic adsorption and pulsed thermal annealing; during the atomistic adsorption, exposing the surface to the ligand or organic species, where the ligand or organic species is void of a metal precursor and is selectively adsorbed to form a metal complex in the surface; and during the pulsed thermal annealing, pulsing the heat source multiple times to remove the metal complex from the substrate.

Abstract: A substrate processing system includes a processing chamber, a substrate support, a heat source, a gas delivery system and a controller. The substrate support is disposed in the processing chamber and supports a substrate. The heat source heats the substrate. The gas delivery system supplies a process gas to the processing chamber. The controller controls the gas delivery system and the heat source to iteratively perform an isotropic atomic layer etch process including: during an iteration of the isotropic atomic layer etch process, performing pretreatment, atomistic adsorption, and pulsed thermal annealing; during the atomistic adsorption, exposing a surface of the substrate to the process gas including a halogen species that is selectively adsorbed onto an exposed material of the substrate to form a modified material; and during the pulsed thermal annealing, pulsing the heat source multiple times within a predetermined period to expose and remove the modified material.

Abstract: A substrate processing system includes a processing chamber, a substrate support, a laser, and a collimating assembly. The substrate support is disposed in the processing chamber and is configured to support a substrate. The laser is configured to generate a laser beam. The collimating assembly includes lenses or minors arranged to direct the laser beam at the substrate to heat an exposed material of the substrate. The lenses or mirrors are configured to direct the laser beam in a direction within a predetermined range of being perpendicular to a surface of the substrate.

Abstract: A method for isotropically etching film on a substrate with atomic layer control includes a) providing a substrate including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium (SiGe). The method includes b) depositing a sacrificial layer on the material in a processing chamber by: cooling a lower portion of the substrate; one of creating or supplying an oxidant-containing plasma in the processing chamber; and increasing a surface temperature of the substrate for a predetermined period using rapid thermal heating while creating or supplying the oxidant-containing plasma in the processing chamber. The method includes c) purging the processing chamber. The method includes d) etching the sacrificial layer and the material by supplying an etch gas mixture and striking plasma in the processing chamber.

Abstract: A method for isotropically etching film on a substrate with atomic layer control includes a) providing a substrate including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium (SiGe). The method includes b) depositing a sacrificial layer on the material in a processing chamber by: cooling a lower portion of the substrate; one of creating or supplying an oxidant-containing plasma in the processing chamber; and increasing a surface temperature of the substrate for a predetermined period using rapid thermal heating while creating or supplying the oxidant-containing plasma in the processing chamber. The method includes c) purging the processing chamber. The method includes d) etching the sacrificial layer and the material by supplying an etch gas mixture and striking plasma in the processing chamber.

Abstract: An inkjet print head configured to smoothly discharge high viscosity ink includes a nozzle part configured to discharge ink, a supply flow path part configured to define a flow path to supply ink to be discharged from the nozzle part, and a micro pattern part formed at least one portion of the supply flow path part that is configured to reduce of a flow resistance of the ink flowing through the supply flow path part.

Abstract: A method of coating an electrolyte layer on a substrate includes forming a hydrophobic layer on an upper surface of the substrate that has a coating area, forming a hydrophilic region having a shape surrounding an outside of the coating area, and forming the electrolyte layer to cover the hydrophobic layer and the hydrophilic region.

Abstract: In an embodiment of the apparatus, a transparent inkjet head includes a first plurality of nozzles, and a color inkjet head includes a second plurality of nozzles. A color value measurement unit is configured to measure color values of ink applied to a plurality of pixels based on signals applied to the second plurality of nozzles of the color inkjet head and signals applied to the first plurality of nozzles of the transparent inkjet head. A control unit is configured to compare the measured color values of the ink applied to the plurality of pixels with a target value and to change the signals applied to the first plurality of nozzles of the transparent inkjet head such that the measured color values of the ink applied to the plurality of pixels are uniform.

Abstract: Example embodiments are directed to an ink discharge device that discharges uniform amounts of ink droplets from an inkjet head, and a control method thereof. Voltages applied to plural nozzles of the ink-head are changed based on different characteristics of the respective nozzles to discharge uniform amounts of ink droplets from the nozzles. Voltage increments are calculated using a fixed target color value so as to set color value dispersion and voltage increments are calculated using different target color values according to the nozzles so as to satisfy color value differences between the neighboring pixels and thus time required for a DPN process is shortened, and excessive changes of the applied voltages are prevented and thus a preparatory period required to mass-produce an LCD panel is shortened and yield of the LCD panel is increased.

Abstract: In an embodiment of the apparatus, a transparent inkjet head includes a first plurality of nozzles, and a color inkjet head includes a second plurality of nozzles. A color value measurement unit is configured to measure color values of ink applied to a plurality of pixels based on signals applied to the second plurality of nozzles of the color inkjet head and signals applied to the first plurality of nozzles of the transparent inkjet head. A control unit is configured to compare the measured color values of the ink applied to the plurality of pixels with a target value and to change the signals applied to the first plurality of nozzles of the transparent inkjet head such that the measured color values of the ink applied to the plurality of pixels are uniform.

Abstract: Example embodiments are directed to an ink discharge device that discharges uniform amounts of ink droplets from an inkjet head, and a control method thereof. Voltages applied to plural nozzles of the ink-head are changed based on different characteristics of the respective nozzles to discharge uniform amounts of ink droplets from the nozzles. Voltage increments are calculated using a fixed target color value so as to set color value dispersion and voltage increments are calculated using different target color values according to the nozzles so as to satisfy color value differences between the neighboring pixels and thus time required for a DPN process is shortened, and excessive changes of the applied voltages are prevented and thus a preparatory period required to mass-produce an LCD panel is shortened and yield of the LCD panel is increased.