Abstract: A functional safety system of a robot according to an exemplary embodiment of the present disclosure can duplicate modules so as to satisfy a performance level d (pl-d) required for the functional satisfy of a robot.

Abstract: A display device including: a substrate including a display area including a pixel area, and a non-display area at at least one side of the display area; a pixel in the pixel area, and including a light emitting element, a color conversion layer located on the light emitting element, and a color filter layer located on the color conversion layer; a first step difference compensation pattern in the non-display area, and around the display area; and a second step difference compensation pattern in the non-display area, and including a first end adjacent to the display area, and a second end opposite to the first end and located adjacent to an edge of the substrate, wherein the second step difference compensation pattern is located on the first step difference compensation pattern and overlaps the first step difference compensation pattern, and covers one end of the first step difference compensation pattern.

Abstract: A three-dimensional semiconductor device may comprise a first cell region, a second cell region, and a via plug region disposed between the first cell region and the second cell region; a word line stack disposed in the first cell region, the via plug region, and the second cell region, the word line stack including a plurality of word lines and a plurality of interlayer insulating layers which are alternately stacked; and a plurality of via plugs exclusively connected to the plurality of the word lines, respectively, by vertically penetrating through the word line stack in the via plug region. The via plugs may have an arrangement of a zigzag pattern in a row direction from a top view. The diameters of the via plugs may increase in the row direction.

Abstract: A display device comprises a first pixel including a first emission area, a second pixel including a second emission area spaced apart from the first emission area in a first direction, and a bank partitioning the first emission area and the second emission area, wherein the first pixel includes a first alignment electrode, a second alignment electrode, and a third alignment electrode sequentially located, spaced apart from each other in the first direction, and overlapping with the first emission area, first light-emitting elements above, and overlapping with, the first alignment electrode and the second alignment electrode, second light-emitting elements above, and overlapping with, the second alignment electrode and the third alignment electrode, and a dummy electrode between the first emission area and the second emission area, and overlapping with the bank.

Abstract: A memory may include a first wafer, and a second wafer stacked on and bonded to the first wafer. The first wafer may include a cell structure including a memory cell array; and a first logic structure disposed under the cell structure, and including a row control circuit. The second wafer may include a second logic structure including a column control circuit.

Abstract: A display device including: a substrate; an active layer disposed on the substrate and including active patterns; a first conductive layer disposed on the active layer; a second conductive layer disposed on the first conductive layer and including a data line; a third conductive layer disposed on the second conductive layer; and a light-emitting element disposed on the third conductive layer, wherein the first conductive layer includes a scan line, a first voltage line, and a second voltage line, the third conductive layer includes a third voltage line connected to the first voltage line and a fourth voltage line connected to the second voltage line, the first voltage line and the second voltage line extend in a first direction, the third voltage line and the fourth voltage line extend in a second direction, and the third voltage line and the fourth voltage line are alternately arranged in the first direction.

Abstract: The present invention relates to a fire resistant paint composition, to a production method for same and to a painting method for a fire resistant paint using same, and, one example of implementation of the present invention can provide a fire resistant paint composition comprising: between 70 and 95 wt. % of a binder; between 1 and 10 wt. % of an aerogel; between 1 and 5 wt. % of a foaming agent; and the remainder of water, and can provide a production method for same and a painting method for a fire resistant paint using same.

Abstract: Disclosed is an antenna-sub harmonic mixer block, which includes a dielectric block disposed on a PCB substrate having a ground surface, an antenna including first antenna patch provided on the dielectric block and having a metal patch and a slot, and a second antenna patch provided on the dielectric block, spaced apart from the first antenna patch to surround the first antenna patch, and that receives a ground voltage at the same potential as the ground surface of the PCB substrate, an RF ground wire disposed on the dielectric block and connected from the first antenna patch to a surface having the same potential as the ground surface, an RF switching stage disposed on the dielectric block, connected to the first antenna patch, and that provides a switching ON/OFF operation in conjunction with the RF ground wire depending on a magnitude of a local signal LO.

Abstract: Provided is a terahertz light source device including an antenna, a plurality of wire electrodes configured to connect the antenna to a power source, a capacitor connected to the wire electrodes between the antenna and the power source, and a plurality of resonance tunneling diodes connected to the wire electrodes between the capacitor and the antenna, and configured to generate a terahertz wave by coupling with the capacitor as a parallel resonance circuit with respect to the power source.

Abstract: A measurement apparatus for measuring a coating amount of a slurry according to the present disclosure includes a light emitter configured to irradiate terahertz wave onto a release paper coated with the slurry, a light receiver configured to receive the terahertz wave, which is irradiated from the light emitter and passes through the release paper coated with the slurry, to obtain a power of the terahertz wave, and a calculating part configured to calculate a thickness of an electrode, formed from the slurry applied to the release paper, based on the power of the terahertz wave received by the light receiver.

Abstract: Disclosed is a phase shift measuring device, which includes a dual mode laser including a first beat light source generating a first beating signal and a second beat light source generating a second beating signal, and that outputs a dual mode signal including the first beating signal and the second beating signal, a first splitter that receives the dual mode signal to generate a first branch signal and a second branch signal, the first branch signal and the second branch signal being including the branched first beating signal and the branched second beating signal, respectively, a phase control unit that receives the first branch signal and to generate a combined signal, a transmitting end that receives the combined signal from the phase control unit and generates a transmission signal based on the combined signal, and a receiving end.

Abstract: There is provided a semiconductor package. The semiconductor package includes: a semiconductor chip; a mold configured to encapsulate the chip; a redistribution layer; and an optical device electrically connected to the chip through the redistribution layer. The mold is formed with an optical path passing through the mold, and light is input to or output from the optical device through the optical path.

Abstract: A method for forming a package includes: molding a semiconductor chip and a light-emitting element; forming a redistribution layer (RDL) which electrically connects the semiconductor chip to the light-emitting element; and arranging a light-receiving element on the redistribution layer to be electrically connected thereto. The light-receiving element is arranged such that at least a portion thereof is located directly above the semiconductor chip.

Abstract: An antenna structure includes a dielectric lens, an antenna substrate on the dielectric lens, and antenna electrodes on the antenna substrate. Each of the antenna electrodes may include a wire electrode and an empty plane having a triangular shape defined by the wire electrode. The antenna structure can reduce periodic reflection of a high frequency signal, suppress a periodic gain reduction phenomenon, and provide flat gain characteristics in a wide frequency band.

Abstract: Disclosed is a method for fabricating a terahertz device, the method including providing a substrate, doping a conductive impurity on an upper surface of the substrate to form an electrode layer, patterning the electrode layer to form antenna electrodes, and forming a photomixer between the antenna electrodes.

Abstract: Provided is an antenna structure. The structure includes a dielectric lens, an antenna substrate on the dielectric lens, and antenna electrodes on the antenna substrate. Here, each of the antenna electrodes may include a wire electrode and an empty plane having a triangular shape defined by the wire electrode.

Abstract: Provided is a terahertz light source device including an antenna, a plurality of wire electrodes configured to connect the antenna to a power source, a capacitor connected to the wire electrodes between the antenna and the power source, and a plurality of resonance tunneling diodes connected to the wire electrodes between the capacitor and the antenna, and configured to generate a terahertz wave by coupling with the capacitor as a parallel resonance circuit with respect to the power source.

Abstract: Provided are a polygon mirror assembly and a scan device. A polygon mirror assembly includes: a polygon mirror including a plurality of reflection surfaces spaced apart from a rotation axis by a predetermined distance; a first motor for rotating the polygon mirror around the rotation axis; a second motor for moving the polygon mirror in a first axial direction such that the rotation axis is tilted while the first motor rotates the polygon mirror; and a clock signal extraction surface for extracting a clock signal for detecting a change in a rotational speed of the first motor.

Abstract: A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.

Abstract: Disclosed is a terahertz wave generating apparatus. The terahertz wave generating apparatus includes a dual mode laser including a first single mode laser that generates a first beating signal, a gain adjustment region that modulates the first beating signal, and a second single mode laser that generates a second beating signal, and a photomixer that mixes the modulated first beating signal and the second beating signal, and that modulates a current supplied based on a beating frequency of the mixed beating signals to generate a terahertz wave signal, and the gain adjustment region is formed between the first single mode laser and the second single mode laser, and the first beating signal is output from the first single mode laser to the gain adjustment region and is modulated based on a reverse bias voltage supplied to the gain adjustment region.