Abstract: Provided is an organic light emitting device comprising a light emitting layer comprising an organic alloy of a compound of Chemical Formula 1 and a compound of Chemical Formula 2, the device having improved driving voltage, efficiency, and lifespan: where A is a benzene ring fused with the two adjacent rings, X1, X2 and X3 are each independently CH or N, provided that at least one of X1, X2 and X3 is N, Ar1-Ar5 are each independently a substituted or unsubstituted C6-60 aryl or a substituted or unsubstituted C2-60 heteroaryl containing at least one of N, O and S, and the other substituents are defined in the specification, provided that at least one of Ar4 and Ar5 is substituted with at least one deuterium, or at least one R2 is deuterium.

Abstract: An organic light emitting device having improved efficiency, driving voltage, and lifespan is provided. The organic light emitting device comprises an anode, a cathode, and a light emitting between the anode and the cathode, and the light emitting layer comprises a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including a compound represented by the following Chemical Formula 1 and a compound represented by the following Chemical Formula 2, is provided.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including an organic alloy of a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, and having improved driving voltage, efficiency and lifetime.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including an organic alloy of a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, and having improved driving voltage, efficiency and lifetime.

Abstract: A compound represented by Chemical Formula 1 and an organic light emitting device including the same are provided. The compound is used as a material for an organic material layer of the organic light emitting device, and provides improved efficiency, low driving voltage, and increased lifespan of the organic light emitting device.

Abstract: Disclosed are an electronic apparatus for recognizing a multimedia signal and an operating method of the electronic apparatus, including segmenting a detection signal into a plurality of frames; segmenting each of the frames into a plurality of blocks; and representing each of the blocks as a hash word based on a time feature and a frequency feature for each of the blocks.

Abstract: Disclosed are an electronic apparatus for recognizing a multimedia signal and an operating method of the electronic apparatus, including segmenting a detection signal into a plurality of frames; segmenting each of the frames into a plurality of blocks; and representing each of the blocks as a hash word based on a time feature and a frequency feature for each of the blocks.

Abstract: A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

Abstract: A leaky plasmon mode directional coupler and a polarization detection module for a magneto-optical pickup head, which uses the leaky plasmon mode directional coupler, are provided. The leaky plasmon mode directional coupler is manufactured by integrating a planar waveguide and a leaky plasmon mode waveguide, which share a cladding layer with each other, into one body. The polarization detection module includes the leaky plasmon mode directional coupler, a first photo diode, which is formed on the leaky plasmon mode directional coupler, and a second photo diode, which is located at an output port of the planar waveguide.

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract: Provided is a photodetector converting an optical signal into an electrical signal. The photodetector includes: a plurality of semiconductor layers sequentially stacked on a substrate; a plurality of photoelectric conversion units formed in the semiconductor layers, respectively, and having different spectral sensitivities from each other; and buffer layers interposed between the adjacent semiconductor layers, respectively. Each of the buffer layers alleviates stress between the adjacent semiconductor layers.

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

Abstract: Provided is a method of growing a pure germanium (Ge) thin film with low threading dislocation density using reduced pressure chemical vapor deposition (RPCVD), which includes growing a Ge thin film on a silicon (Si) substrate at a low temperature, performing real-time annealing for a short period of time, and growing the annealed Ge thin film at a high temperature. The grown Ge single crystal thin film can overcome conventional problems of generation of a Si—Ge layer due to Si diffusion, and propagation of misfit dislocation to a high-temperature Ge thin film.

Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.

Abstract: A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.