Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

Abstract: Disclosed herein is an ultrasound imaging apparatus capable of setting a region of interest having a shape corresponding to a shape of the cervix canal in an elasticity image of the cervix and displaying the region of interest, and a control method thereof. The ultrasound imaging apparatus includes a display unit configured to display an ultrasound elasticity image and a controller configured to select a point included in a path corresponding to the cervix canal in the elasticity image of the cervix displayed on the display unit, configured to set a region of interest having a shape corresponding to a shape of at least one portion of the cervix canal based on the selected point, and configured to display the region of interest on the display unit.

Abstract: Provided is an apparatus for analyzing an electroluminescence sample, which comprises: a pulse generator for applying a pulse driving signal to the electroluminescence sample; an electroluminescence (EL) detector for receiving electroluminescence which is emitted from the electroluminescence sample according to the application of the pulse driving signal, thereby acquiring a light-receiving signal; a temperature controller for varying the temperature of the electroluminescence sample; and an electroluminescence transient spectroscopy (ELTS) analysis unit for analyzing a change in a time division section of the light-receiving signal delayed depending on a change of the temperature of the electroluminescence sample, and acquiring information on a defect-type charge trap which exists in the electroluminescence sample.

Abstract: A silicon nanowire including metal nanoclusters formed on a surface thereof at a high density. The metal nanocluster improves electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.

Abstract: A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.

Abstract: A silicon nanowire including metal nanoclusters formed on a surface thereof at a high density. The metal nanocluster improves electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.

Abstract: A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.