Patents by Inventor Dong Xiang CHENG

Dong Xiang CHENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11808975
    Abstract: A semiconductor structure and a fabrication method are provided. The semiconductor structure includes: a base substrate, an optical waveguide layer over the base substrate; a first dielectric layer over the base substrate; a cavity between the first dielectric layer and the optical waveguide layer; and a second dielectric layer on the first dielectric layer and the optical waveguide layer. The cavity is located on sidewall surfaces of the optical waveguide layer and has a bottom coplanar with a bottom of the optical waveguide layer. The second dielectric layer is located on a top of the cavity and seals the cavity.
    Type: Grant
    Filed: December 27, 2021
    Date of Patent: November 7, 2023
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Jun Liu, Hong Gang Dai, Dong Xiang Cheng
  • Publication number: 20220206217
    Abstract: A semiconductor structure and a fabrication method are provided. The semiconductor structure includes: a base substrate, an optical waveguide layer over the base substrate; a first dielectric layer over the base substrate; a cavity between the first dielectric layer and the optical waveguide layer; and a second dielectric layer on the first dielectric layer and the optical waveguide layer. The cavity is located on sidewall surfaces of the optical waveguide layer and has a bottom coplanar with a bottom of the optical waveguide layer. The second dielectric layer is located on a top of the cavity and seals the cavity.
    Type: Application
    Filed: December 27, 2021
    Publication date: June 30, 2022
    Inventors: Jun LIU, Hong Gang DAI, Dong Xiang CHENG