Patents by Inventor Dong Xiang Qi

Dong Xiang Qi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6607993
    Abstract: A method is provided for manufacturing an integrated circuit including a substrate with a gate layer and a gate dielectric provided on the substrate. The gate layer is formed into a gate using a process that imposes a charge in the gate dielectric. The substrate, gate, and gate dielectric are irradiated to discharge the charge across the gate dielectric.
    Type: Grant
    Filed: August 19, 2002
    Date of Patent: August 19, 2003
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Ronald Dickinson, Yeow Meng Teo, Dong Xiang Qi, Rajan Rajgopal