Abstract: An array substrate of the present invention includes a storage capacitor that has a storage-on-gate structure. One embodiment of the present invention discloses the array substrate having a metal island pattern on the substrate beneath a drain electrode. The metal island pattern is disposed beneath a drain contact hole through which a pixel electrode contacts the drain electrode. Since the metal island pattern has the same thickness as the gate line, the passivation layer can have the same height both in a drain region and in a storage region. Over-etching is minimized with the passivation layer in the drain and storage region having the same uniform thickness.