Abstract: A data processing method and apparatus that may set emotion based on development of a story are provided. The method and apparatus may set emotion without inputting emotion for each sentence of text data. Emotion setting information is generated based on development of the story and the like, and may be applied to the text data.

Abstract: An image processing method and apparatus. The image processing method includes an analysis module analyzing vanishing points of an image and icons by using a database, a mesh mapping module mapping a mesh on the image based on the result of analysis, and an icon mapping module mapping icons on the image based on the result of analysis. The mesh includes a plurality of horizontal lines and a plurality of perspective lines, and the icons include general icons indicating objects in the image and length icons indicating lengths.

Abstract: A method for forming a contact hole in a semiconductor device includes forming gate lines on a substrate, forming a bit line pattern by forming a bit line and a bit line hard mask in sequential order over the substrate, forming an inter-layer insulation layer having a multiple-layer structure including an etch stop layer over the substrate, forming a contact mask over the inter-layer insulation layer, performing a first etching process to etch a first portion of the inter-layer insulation layer above the etch stop layer, using the contact mask as an etch mask, and performing a second etching process to etch the etch stop layer, a second portion of the inter-layer insulation layer below the etch stop layer, and the bit line hard mask to form a contact hole exposing a portion of the bit line.

Abstract: A method for forming a contact hole in a semiconductor device includes forming gate lines on a substrate, forming a bit line pattern by forming a bit line and a bit line hard mask in sequential order over the substrate, forming an inter-layer insulation layer having a multiple-layer structure including an etch stop layer over the substrate, forming a contact mask over the inter-layer insulation layer, performing a first etching process to etch a first portion of the inter-layer insulation layer above the etch stop layer, using the contact mask as an etch mask, and performing a second etching process to etch the etch stop layer, a second portion of the inter-layer insulation layer below the etch stop layer, and the bit line hard mask to form a contact hole exposing a portion of the bit line.