Abstract: Provide an apparatus for selective epitaxial growth. The apparatus for selective epitaxial growth, the apparatus comprising, a process tube comprising an inner tube in which a substrate stack unit for receiving a plurality of substrates is accommodated and an outer tube surrounding the inner tube, a heater assembly disposed to surround the process tube and a side nozzle unit vertically disposed inside the process tube, wherein the side nozzle unit comprises first and second side nozzles for respectively spraying an etching gas and a depo gas for the selective epitaxial growth.

Abstract: The present disclosure relates to a deposition apparatus used to manufacture a semiconductor device including a process chamber; a substrate susceptor installed in the process chamber and including a plurality of concentrically arranged stages on which substrates are positioned; a plurality of members for supplying reaction gas; a member for supplying purge gas; a spray member including a plurality of baffles for independently spraying reaction gas and purge gas, supplied from the plurality of members supplying reaction gas and the member supplying purge gas, on the entirety of the treating surfaces of the substrate, in positions corresponding respectively to the substrates positioned on the stages; and a driving unit for rotating the substrate susceptor or the spray member in order for the baffles of the spray member to sequentially revolve each of the plurality of substrates positioned on the stages.

Abstract: Provided is a gas phase etching apparatus. The gas phase etching apparatus includes a process chamber having an inner space that is defined by a chamber body having an opened upper portion and an upper dome having an opened lower portion and detachably coupled to an upper portion of the chamber body, a substrate susceptor disposed in the inner space to ascend and descend by a driving unit, and a ring plate disposed on the substrate susceptor to cover a space between the substrate susceptor and an outer wall of the process chamber so that the inner space is partitioned into a process region defined above the substrate susceptor and an exhaust region defined below the substrate susceptor. The process region partitioned by the ring plate is surrounded by the upper dome, and the exhaust region is surrounded by the chamber body.

Abstract: A substrate treating equipment includes a process tube receiving a boat in which a plurality of substrates are loaded, a heater assembly installed to surround the process tube, a nozzle unit supplying a process gas for forming a thin film on surfaces of the substrates into the process tube. The nozzle unit includes a heating reflecting member blocking and reflecting thermal energy provided from the heater assembly.

Abstract: Provide an apparatus for selective epitaxial growth. The apparatus for selective epitaxial growth, the apparatus comprising, a process tube comprising an inner tube in which a substrate stack unit for receiving a plurality of substrates is accommodated and an outer tube surrounding the inner tube, a heater assembly disposed to surround the process tube and a side nozzle unit vertically disposed inside the process tube, wherein the side nozzle unit comprises first and second side nozzles for respectively spraying an etching gas and a depo gas for the selective epitaxial growth.

Abstract: Provided is a substrate processing apparatus which include a process chamber in which a plurality of substrates are accommodated to be processed, a support member mounted at the process chamber and having the same plane on which a plurality of substrate are placed, an injection member mounted opposite to the support member and including a plurality of independent baffles to independently inject the least one reactive gas and the purge gas at positions respectively corresponding to the plurality of substrates placed on the support member, and a driving unit adapted to rotate the support member or the injection member such that the baffles of the injection member sequentially revolve around the plurality of respective substrates. The injection member includes a plasma generator mounted at least one of the baffles to plasmatize a reactive gas injected to a substrate.

Abstract: A plasma processing apparatus may include a process chamber configured to perform a plasma using process and contain a plurality of substrates, a support member provided in the process chamber, the substrates being laid on the same level of the support member, an injection member provided to face the support member and include a plurality of baffles, such that at least one reaction gas and a purge gas can be injected onto the substrates in an independent manner, and a driving part configured to rotate the support member or the injection member, such that the baffles of the injection member can orbit with respect to the plurality of the substrates laid on the support member. The injection member may include a plasma generator, which may be provided on at least one, configured to inject the reaction gas, of the baffles to turn the reaction gas into plasma.

Abstract: The present disclosure relates to a deposition apparatus used to manufacture a semiconductor device including a process chamber; a substrate susceptor installed in the process chamber and including a plurality of concentrically arranged stages on which substrates are positioned; a plurality of members for supplying reaction gas; a member for supplying purge gas; a spray member including a plurality of baffles for independently spraying reaction gas and purge gas, supplied from the plurality of members supplying reaction gas and the member supplying purge gas, on the entirety of the treating surfaces of the substrate, in positions corresponding respectively to the substrates positioned on the stages; and a driving unit for rotating the substrate susceptor or the spray member in order for the baffles of the spray member to sequentially revolve each of the plurality of substrates positioned on the stages.

Abstract: An ultrasound imaging system and method for making a harmonic image of a good SNR (signal-to-noise ratio) by effectively removing fundamental frequency components through a pulse-compressing using weighted chirp signals, is provided. The ultrasound imaging system includes: a transducer array for converting weighted chirp signals to ultrasound signals, and transmitting the ultrasound signals to a target object; a receiver for receiving signals reflected from the target object; a pulse-compressor for selectively pulse-compressing fundamental frequency components or harmonic frequency components in the reflected signals; and a producer for producing receive-focused signals from the pulse-compressed signals. Therefore, the ultrasound imaging system can form ultrasound image using the fundamental frequency components, and can form ultrasound harmonic image using the harmonic frequency components according to 2fo-correlation method or 2fo-correlation (PI) method.

Abstract: The present invention discloses an ultrasound imaging system and method which make a harmonic image of a good SNR(signal-to-noise ratio) by effectively removing fundamental frequency components through a pulse-compressing using the weighted chirp signals. The ultrasound imaging system includes: a transducer array for converting weighted chirp signals to ultrasound signals, and transmitting the ultrasound signals to a target object; a receiver for receiving signals reflected from the target object; a pulse-compressor for selectively pulse-compressing fundamental frequency components or harmonic frequency components in the reflected signals; and a producer for producing receive-focused signals from the pulse-compressed signals. Therefore, the ultrasound imaging system can form ultrasound image using the fundamental frequency components, and can form ultrasound harmonic image using the harmonic frequency components according to 2fo-correlation method or 2fo-correlation(PI) method.