Abstract: An exposure system for adjusting the critical dimension difference between vertical patterns and horizontal patterns includes a light source for generating a light beam having a predetermined wavelength, a lens for transforming the shape of the light beam generated from the light source into an elliptical shape extended vertically or horizontally, and a lens system for projecting the elliptical light beam passed through the lens onto a wafer through a recticle.

Abstract: An overlay vernier comprises overlay vernier patterns having a layout identical to that of patterns disposed within a real cell. A lower overlay vernier pattern is formed within a scribe line region along with a lower layer pattern as a lower layer of the real cell, and an upper overlay vernier pattern is formed within the scribe line region along with an upper layer pattern as an upper layer of the real cell. The lower overlay vernier pattern and the upper overlay vernier pattern have the same layout as that of the lower layer pattern and the upper layer pattern, respectively. The upper layer pattern and the lower layer pattern disposed within the real cell can be accurately aligned using the degree of overlap between the upper overlay vernier pattern and the lower overlay vernier pattern.

Abstract: A photo mask, which has subsidiary patterns added into holes formed through a plurality of ring gate patterns having vertically symmetrical structures used in a semiconductor exposure step, such that the subsidiary patterns are separated from the ring gate patterns by a designated distance, and a method for manufacturing patterns using the same. The subsidiary patterns are located in the holes at positions separated from the ring gate patterns by the designated distance, thereby reducing variation of critical dimensions of one pair of the vertically opposite ring gate patterns, which must be the same, due to lens aberration, thereby precisely forming fine patterns.