Patents by Inventor Dong-Yoon Jang

Dong-Yoon Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100133635
    Abstract: The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.
    Type: Application
    Filed: November 25, 2009
    Publication date: June 3, 2010
    Inventors: Kyung Ho Lee, Dong-Yoon Jang, Jung Chak Ahn, Moo Sup Lim, Yong Jei Lee, Jong Eun Park
  • Publication number: 20100133638
    Abstract: An image sensor includes a plurality of photodiodes, a plurality of wells isolating the plurality of photodiodes from each other, and a plurality of conductive layers or conductive lines for suppressing a dark current generated at the surface of the photodiodes and in the wells in response to a bias voltage.
    Type: Application
    Filed: November 30, 2009
    Publication date: June 3, 2010
    Inventors: Jong Eun Park, Jung Chak Ahn, Yong Jei Lee, Dong-Yoon Jang
  • Publication number: 20100045836
    Abstract: An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.
    Type: Application
    Filed: August 18, 2009
    Publication date: February 25, 2010
    Inventors: Yong Jei Lee, Jung Chak Ahn, Jong Eun Park, Dong-Yoon Jang
  • Publication number: 20090294816
    Abstract: Provided are a CMOS image sensor and a driving method thereof. The CMOS image sensor may include a photodetector disposed in a semiconductor substrate to accumulate photocharges, a charge transfer element configured to control transfer of the photocharges accumulated in the photodetector, a detecting element configured to detect the photocharges transferred by the charge transfer element, and a well driving contact configured to increase a potential difference between the photodetector and the detecting element while the photocharges are transferred.
    Type: Application
    Filed: May 14, 2009
    Publication date: December 3, 2009
    Inventors: Jong-Eun Park, Jung-Chak Ahn, Yong-Jei Lee, Dong-Yoon Jang
  • Publication number: 20080182354
    Abstract: CMOS image sensors and related methods of fabricating CMOS image sensors are disclosed. Fabrication of a CMOS image sensor can include forming a first impurity region having a first conductivity type in a semiconductor substrate. A second impurity region having a second conductivity type is formed in the semiconductor substrate adjacent to the first impurity region. A third impurity region having the first conductivity type is formed in the semiconductor substrate and located below the second impurity region. A transfer gate is formed on the semiconductor substrate and at least partially overlaps the first, second, and third impurity regions. A photo sensitive device is formed in the semiconductor substrate and adjacent to one side of the transfer gate. A floating diffusion region is formed in the semiconductor substrate and located adjacent to an opposite side of the transfer gate from the photosensitive device.
    Type: Application
    Filed: December 4, 2007
    Publication date: July 31, 2008
    Inventors: Jong-Jin Lee, Ju-Hyun Ko, Jong-Eun Park, Hyun-Suk Kim, Dong-Yoon Jang
  • Publication number: 20060289911
    Abstract: Disclosed is a CMOS image sensor, comprising a photodiode formed in a substrate, a floating diffusion region formed in the substrate in a manner such that it is distanced from the photodiode surrounds the photodiode and a transfer gate formed in a manner such that it is distanced from the photodiode and the floating diffusion region and formed in a boundary area between the photodiode and the floating diffusion region, thereby overlapping the photodiode and the floating diffusion region.
    Type: Application
    Filed: June 22, 2006
    Publication date: December 28, 2006
    Inventors: Sang-Jun Lee, Yang-Kyu Choi, Dong-Yoon Jang
  • Publication number: 20060208342
    Abstract: The present invention relates to a SON MOSFET and method of manufacturing the same, in which a blister is formed within a silicon substrate, thus improving the disadvantages of a bulk structure and a Silicon-On-Insulator (SOI) structure at the same time. The SON MOSFET according to the present invention comprises isolation insulating films formed at both upper sides of a silicon substrate, a gate insulating film and a gate electrode that are sequentially formed on a surface of the silicon substrate between the isolation insulating films, a source region and a drain region that are formed on the silicon substrate between the gate insulating film and the isolation insulating films, a blister formed within the silicon substrate under the gate insulating film, and a silicon channel, which is surrounded by the blister, the source region and the drain region, within the silicon substrate, wherein the blister is formed of hydrogen or helium ion.
    Type: Application
    Filed: February 1, 2006
    Publication date: September 21, 2006
    Inventors: Yang-Kyu Choi, Dong-Yoon Jang