Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise an interconnection structure, for example a bond wire, at least a portion of which extends into a dielectric layer utilized to mount a plate, and/or that comprise an interconnection structure that extends upward from the semiconductor die at a location that is laterally offset from the plate.

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate than a 4G communication system such as LTE. The disclosure relates to a method and an apparatus for enhancement of self-interference channel estimation performance to secure self-interference removal performance in full-duplex (FD) communication and, more specifically, to a method and an apparatus for scheduling a transmission resource for enhanced self-interference channel estimation in the FD communication.

Abstract: Disclosed is a process for recovery of uranium from a spent nuclear fuel using a carbonate solution, characterized by excellent proliferation resistance of preventing leaching of transuranium element (TRU) nuclides such as Pu, Np, Am, Cm, etc. from the spent nuclear fuel as well as environmental friendliness of minimizing waste generation, wherein a highly alkaline carbonate solution is used to separate uranium alone from the spent nuclear fuel.

Abstract: Disclosed is a process for recovery of uranium from a spent nuclear fuel using a carbonate solution, characterized by excellent proliferation resistance of preventing leaching of transuranium element (TRU) nuclides such as Pu, Np, Am, Cm, etc. from the spent nuclear fuel as well as environmental friendliness of minimizing waste generation, wherein a highly alkaline carbonate solution is used to separate uranium alone from the spent nuclear fuel.