Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: Disclosed is a process for recovery of uranium from a spent nuclear fuel using a carbonate solution, characterized by excellent proliferation resistance of preventing leaching of transuranium element (TRU) nuclides such as Pu, Np, Am, Cm, etc. from the spent nuclear fuel as well as environmental friendliness of minimizing waste generation, wherein a highly alkaline carbonate solution is used to separate uranium alone from the spent nuclear fuel.

Abstract: Disclosed is a process for recovery of uranium from a spent nuclear fuel using a carbonate solution, characterized by excellent proliferation resistance of preventing leaching of transuranium element (TRU) nuclides such as Pu, Np, Am, Cm, etc. from the spent nuclear fuel as well as environmental friendliness of minimizing waste generation, wherein a highly alkaline carbonate solution is used to separate uranium alone from the spent nuclear fuel.