Abstract: A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a first conductive semiconductor layer including a plurality of V-shaped recesses; an active layer on the first conductive semiconductor layer along a shape of the plurality of V-shaped recesses; a second conductive semiconductor layer on the active layer; a reflection assisting layer on the second conductive semiconductor layer; and a reflection layer on the reflection assisting layer, wherein a thickness of the second conductive semiconductor layer is 45 nm to 100 nm.

Abstract: A fingerprint recognition device includes: an integrated circuit electrically connected to at least one sensor electrode; a first circuit board located at an upper portion of the integrated circuit and provided with the at least one sensor electrode; a second circuit board electrically connected to the first circuit board and located at under the integrated circuit; a molding layer provided under the first circuit board to surround the integrated circuit so as to protect the integrated circuit from the outside; and a connection part electrically connecting the first circuit board and the second circuit board.

Abstract: A light-emitting device that may be manufactured includes an n-type semiconductor layer including a first dopant on a substrate, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer including a second dopant on the active layer. The light-emitting device may be formed according to at least one of a first layering process and a second layering process. The first layering process may include implanting the first dopant into the n-type semiconductor layer into the n-type semiconductor layer according to an ion-implantation process, and the second layering process may include implanting the second dopant into the p-type semiconductor layer according to an ion-implantation process. Forming a semiconductor layer that includes an ion-implanted dopant may include thermally annealing the semiconductor layer subsequent to the ion implantation.

Abstract: The present invention relates to an X-ray photographing apparatus and method capable of variously and finely adjusting a magnification power by sliding a rotating portion supporting an X-ray source portion and a sensor portion facing each other in a state in which an interval between the X-ray source portion and the sensor portion is maintained to change an interval between the sensor portion and a head of a subject to be examined. The X-ray photographing apparatus includes: a rotating portion including an X-ray source portion and a sensor portion facing each other and provided at a shaft through a moving means so as to be movable in an X-ray irradiation direction; and an actuating portion adjusting a magnification power by changing an interval between the sensor portion and a head of a subject to be examined in a state in which an interval between the X-ray source portion and the sensor portion is maintained.

Abstract: A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a first conductive semiconductor layer including a plurality of V-shaped recesses; an active layer on the first conductive semiconductor layer along a shape of the plurality of V-shaped recesses; a second conductive semiconductor layer on the active layer; a reflection assisting layer on the second conductive semiconductor layer; and a reflection layer on the reflection assisting layer, wherein a thickness of the second conductive semiconductor layer is 45 nm to 100 nm.

Abstract: Exemplary embodiments may disclose a mobile device which is connected with an external input device, and includes a first connector for receiving an input signal generated by the external input device through a docking station, the first connector being detachably connected with the docking station; and a first controller for receiving the input signal from the first connector, and executing a pre-stored function corresponding to the received input signal.

Abstract: There are provided an apparatus and method for photographing an object. An apparatus for photographing an object using top and bottom buttons includes: a head part including a camera; a connection part coupled to the head part and extended in a length direction thereof, and having a first button for manipulating the camera on an extension line in the length direction from a formation position of the head part and a second button for manipulating the camera formed on a surface opposite to the first button; and a body part including a power source means coupled to the connection part and supplying power to the camera, and a display means displaying a state of the camera or a power state.

Abstract: A light-emitting device that may be manufactured includes an n-type semiconductor layer including a first dopant on a substrate, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer including a second dopant on the active layer. The light-emitting device may be formed according to at least one of a first layering process and a second layering process. The first layering process may include implanting the first dopant into the n-type semiconductor layer into the n-type semiconductor layer according to an ion-implantation process, and the second layering process may include implanting the second dopant into the p-type semiconductor layer according to an ion-implantation process. Forming a semiconductor layer that includes an ion-implanted dopant may include thermally annealing the semiconductor layer subsequent to the ion implantation.

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract: A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.

Abstract: Disclosed are fingerprint recognition device having an improved structure to enable a driving device of an integrated circuit to have durability, a manufacturing method therefor, and an electronic device. The fingerprint recognition device comprise: an integrated circuit electrically connected to at least one sensor electrode; a first circuit board located at an upper portion of the integrated circuit and provided with the at least one sensor electrode; a second circuit board electrically connected to the first circuit board and located at under the integrated circuit; a molding layer provided under the first circuit board to surround the integrated circuit so as to protect the integrated circuit from the outside; and a connection part electrically connecting the first circuit board and the second circuit board.

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract: A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.

Abstract: A system and method for providing a content download service, that preferably includes a content service server for receiving a request for a content service from a client terminal accessed through a network, and identifying the client terminal and one or more sub-client terminals connected to the client terminal to route the requested contents and a download control signal. A client terminal obtains inherent information from one or more adjacent terminals to request a service from the content service server, and decodes transmitted contents by using the inherent information of the adjacent terminals when receiving the download control signal from the content service server.

Abstract: A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Abstract: A method of adjusting value includes calculating a value of saturation from an input image signal, and adjusting a value of value of the input image signal according to a calculated saturation value. In the method, the value of value of the input image signal is adjusted by using a value adjustment algorithm for determining a value adjustment rate that decreases the value according to the saturation value.

Abstract: A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.

Abstract: Exemplary embodiments may disclose a mobile device which is connected with an external input device, and includes a first connector for receiving an input signal generated by the external input device through a docking station, the first connector being detachably connected with the docking station; and a first controller for receiving the input signal from the first connector, and executing a pre-stored function corresponding to the received input signal.

Abstract: There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.