Abstract: A thin film transistor and a method for manufacturing the same, an array substrate and an electronic device. The thin film transistor includes a gate, a gate insulator, an active layer, a source and a drain. A protective structure is disposed on a side of the source and the drain close to the gate.

Abstract: A thin film transistor and a method for manufacturing the same, an array substrate and an electronic device. The thin film transistor includes a gate, a gate insulator, an active layer, a source and a drain. A protective structure is disposed on a side of the source and the drain close to the gate.

Abstract: Embodiments of the disclosure provide an array substrate and a manufacturing method thereof, and a display device. The method includes: forming a semiconductor material film, a first insulation material film and a first conductive material film successively on a base substrate, and processing these films through a single patterning process to form an active pattern, a gate insulation pattern and a gate electrode; forming a second insulation layer and forming two contact holes in the second insulation layer and gate insulation pattern; forming a second conductive material film and forming two contact structures from portions of this layer; and forming a third conductive material film, and processing this layer through a single patterning process to form a pixel electrode, and source and drain electrodes being in direct contact with the two contact structures respectively, the pixel electrode and one contact structure being integrated into one piece.

Abstract: Embodiments of the disclosure provide an array substrate and a manufacturing method thereof, and a display device. The method includes: forming a semiconductor material film, a first insulation material film and a first conductive material film successively on a base substrate, and processing these films through a single patterning process to form an active pattern, a gate insulation pattern and a gate electrode; forming a second insulation layer and forming two contact holes in the second insulation layer and gate insulation pattern; forming a second conductive material film and forming two contact structures from portions of this layer; and forming a third conductive material film, and processing this layer through a single patterning process to form a pixel electrode, and source and drain electrodes being in direct contact with the two contact structures respectively, the pixel electrode and one contact structure being integrated into one piece.