Patents by Inventor Dongcheng XIE

Dongcheng XIE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230341367
    Abstract: A MEMS gas sensor (A) and array (B) thereof, a gas detection and preparation method. The gas sensor (A) comprises a first substrate (A2) with a cavity (A1) provided in a first surface, and a gas detection assembly (A3) arranged at an opening of the cavity The gas detection assembly comprises: a supporting suspension bridge (A31) erected on the opening of the cavity, and a gas detection part (A32) arranged on the supporting suspension bridge. The gas detection part comprises a strip-shaped heating electrode part (A321), an insulating layer (A322), a strip-shaped detection electrode part (A323) and a gas-sensitive material part (A324), which are sequentially stacked. The strip-shaped detection electrode part comprises a first detection electrode part (A323-1) and a second detection electrode part (A323-2), with a first opening (A325) provided between the A323-1 and A323-2; the gas-sensitive material part is arranged at the position of the first opening.
    Type: Application
    Filed: July 10, 2020
    Publication date: October 26, 2023
    Applicant: Wiinaa Co., Ltd.
    Inventors: Lei XU, Dongcheng XIE, Dongliang CHEN
  • Publication number: 20230204554
    Abstract: A MEMS gas sensor (A), array thereof, and preparation method therefor. The MEMS gas sensor comprises a first substrate (A2) provided with a first cavity (A1), and N gas detection assemblies (A3) provided at an opening of A1, each A3 comprises: a supporting arm (A31) and a gas detection part (A32) provided on the A31; the A32 comprises a strip-shaped heating electrode part (A321), an insulating layer (A322), a strip-shaped detection electrode part (A323), and a gas-sensitive material part (A324) that are stacked sequentially; the A323 comprises a first detection electrode part (A323-1) and a second detection electrode part (A323-2) with a first opening (A325) therebetween; the A324 is provided at the A325; a first end of the A324 is connected to the A323-1, a second end of the A324 is connected to the A323-2; strip-shaped heating electrode parts in each A3 are connected sequentially to form a heater (A8).
    Type: Application
    Filed: July 10, 2020
    Publication date: June 29, 2023
    Applicant: Wiinaa Co., Ltd.
    Inventors: Lei XU, Dongcheng XIE, Dongliang CHEN
  • Patent number: 10914700
    Abstract: A single cantilever gas sensor includes a silicon substrate, a supporting film, a heating resistor, a isolation film, and a detecting electrode, which are successively stacked. The gas sensor is T-shaped and has a base structure and a cantilever structure The end portion of the cantilever structure is provided with a gas sensitive material. The present invention further provides a sensor array composed of the single cantilever gas sensors and a method for manufacturing the gas sensor. The method includes (1) selecting a silicon substrate; (2) preparing a supporting film; (3) preparing a heating resistor; (4) preparing an isolation film; (5) preparing a detecting electrode; (6) releasing a membrane; (7) loading a gas sensitive material.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: February 9, 2021
    Assignee: HEFEI MICRO NANO SENSING TECHNOLOGY CO., LTD.
    Inventors: Lei Xu, Dongcheng Xie, Shufeng Peng
  • Publication number: 20200333277
    Abstract: A single cantilever gas sensor includes a silicon substrate, a supporting film, a heating resistor, a isolation film, and a detecting electrode, which are successively stacked. The gas sensor is T-shaped and has a base structure and a cantilever structure The end portion of the cantilever structure is provided with a gas sensitive material. The present invention further provides a sensor array composed of the single cantilever gas sensors and a method for manufacturing the gas sensor. The method includes (1) selecting a silicon substrate; (2) preparing a supporting film; (3) preparing a heating resistor; (4) preparing an isolation film; (5) preparing a detecting electrode; (6) releasing a membrane; (7) loading a gas sensitive material.
    Type: Application
    Filed: December 12, 2018
    Publication date: October 22, 2020
    Applicant: HEFEI MICRO NANO SENSING TECHNOLOGY CO., LTD.
    Inventors: Lei XU, Dongcheng XIE, Shufeng PENG
  • Patent number: 10801981
    Abstract: A gas sensor includes a silicon substrate, a detecting electrode, a first isolation film, a heating resistor, and a second isolation film that are successively stacked. The gas sensor has a base structure and a cantilever structure with a curled free end, and a gas sensitive material is provided on the end of the cantilever structure. A sensor array composed of the gas sensor, and a method for manufacturing the gas sensor are also provided. The method includes (1) selecting a sacrificial layer; (2) preparing a detecting electrode; (3) preparing a first isolation film; (4) preparing a heating resistor; (5) preparing a second isolation film; (6) releasing the membrane; and (7) loading the gas sensitive material.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: October 13, 2020
    Assignee: HEFEI MICRO NANO SENSING TECHNOLOGY CO., LTD.
    Inventors: Lei Xu, Shufeng Peng, Dongcheng Xie, Ruiying Zhou
  • Publication number: 20200225180
    Abstract: A gas sensor includes a silicon substrate, a detecting electrode, a first isolation film, a heating resistor, and a second isolation film that are successively stacked. The gas sensor has a base structure and a cantilever structure with a curled free end, and a gassensitive material is provided on the end of the cantilever structure. A sensor array composed of the gas sensor, and a method for manufacturing the gas sensor are also provided. The method includes (1) selecting a sacrificial layer; (2) preparing a detecting electrode; (3) preparing a first isolation film; (4) preparing a heating resistor; (5) preparing a second isolation film; (6) releasing the membrane; and (7) loading the gas sensitive material.
    Type: Application
    Filed: December 12, 2018
    Publication date: July 16, 2020
    Applicant: HEFEI MICRO NANO SENSING TECHNOLOGY CO., LTD.
    Inventors: Lei XU, Shufeng PENG, Dongcheng XIE, Ruiying ZHOU