Patents by Inventor Dong-Chul Seo

Dong-Chul Seo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11949881
    Abstract: The present invention discloses an encoding apparatus using a Discrete Cosine Transform (DCT) scanning, which includes a mode selection means for selecting an optimal mode for intra prediction; an intra prediction means for performing intra prediction onto video inputted based on the mode selected in the mode selection means; a DCT and quantization means for performing DCT and quantization onto residual coefficients of a block outputted from the intra prediction means; and an entropy encoding means for performing entropy encoding onto DCT coefficients acquired from the DCT and quantization by using a scanning mode decided based on pixel similarity of the residual coefficients.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: April 2, 2024
    Assignees: Electronics and Telecommunications Research Institute, Kwangwoon University Research Institute for Industry Cooperation, Industry-Academia Cooperation Group of Sejong University
    Inventors: Se-Yoon Jeong, Hae-Chul Choi, Jeong-Il Seo, Seung-Kwon Beack, In-Seon Jang, Jae-Gon Kim, Kyung-Ae Moon, Dae-Young Jang, Jin-Woo Hong, Jin-Woong Kim, Yung-Lyul Lee, Dong-Gyu Sim, Seoung-Jun Oh, Chang-Beom Ahn, Dae-Yeon Kim, Dong-Kyun Kim
  • Patent number: 11940846
    Abstract: A display device includes a display panel including a rear surface and a front surface, where the front surface is provided with a display surface and including a folding axis extending in a first direction, a first barrier member disposed on the rear surface of the display panel and having a modulus of about 1 GPa to about 300 GPa, a first coupling member disposed on a rear surface of the first barrier member, and a metal plate disposed on a rear surface of the first coupling member and including a first plate portion and a second plate portion which are arranged in a second direction crossing the first direction and a connection portion connecting the first plate portion and the second plate portion, where the first coupling member does not overlap the connection portion in a plan view.
    Type: Grant
    Filed: April 20, 2023
    Date of Patent: March 26, 2024
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jai Ku Shin, Dong Jin Park, Dong Woo Seo, Sung Chul Choi
  • Patent number: 9321875
    Abstract: Provided are an additive for resist represented by the following formula (1), and a resist composition containing the additive. The additive according to the present invention can suppress leaching caused by water during an immersion lithographic process by increasing hydrophobicity of the surface of the resist film in the exposure at the time of applying the additive to a resist composition, and can form a fine resist pattern having excellent sensitivity and resolution at the time of applying the additive to a resist composition. wherein the substituents respectively have the same meanings as defined above.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: April 26, 2016
    Assignee: KOREA KUMHO PETROCHEMICAL CO., LTD.
    Inventors: Jin Bong Shin, Dong Chul Seo, Hyun Soon Lim, Joon Hee Han
  • Patent number: 8865919
    Abstract: A sulfonium compound represented by formula (1), a photo-acid generator, and a method for producing a sulfonium compound are provided: wherein X represents an electron-donating group; R1 and R2 each represent an alkyl group, a cycloalkyl group, or the like; R3 and R4 each represent an arylene group or a heteroarylene group; R5 and R6 each represent an alkyl group, a cycloalkyl group, or the like; and A? and B? are anions that are different from each other. The sulfonium compound, when used as a photo-acid generator, can produce a uniform and excellent resist pattern.
    Type: Grant
    Filed: December 30, 2011
    Date of Patent: October 21, 2014
    Assignee: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Hyun Sang Joo, Dong Chul Seo, Dae Kyung Yoon, Dae Hyeon Shin
  • Patent number: 8765358
    Abstract: A water-soluble resin composition for forming fine patterns comprising water-soluble polymer represented by Chemical Formula 1 as below and the first water-soluble solvent, is coated and heated on a photoresist layer having at least one contact hole to reduce a size of the at least one contact hole. (In Chemical Formula 1, each of R1, R2, R3 and R5 independently represents an alkyl group of C1-30 or an cyclo alkyl group of C3-30 which respectively have one selected from the group consisting of hydrogen, an ether group, an ester group, a carbonyl group, an acetal, an epoxy group, a nitril group, an amine group, and an aldehyde group; each of R4, R6, R7 and R8 independently represents hydrogen or a methyl group; n represents an integer of 0 to 5; a represents a real number of 0.05 to 0.5; each of b, c and d respectively represents a real number of 0 to 0.7; and a+b+c+d=1).
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: July 1, 2014
    Assignee: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Sang Wook Park, So Jung Park, Dong-Chul Seo
  • Patent number: 8617789
    Abstract: A photoacid generator represented by the following formula (1), a method for producing the photoacid generator, and a resist composition containing the photoacid generator are provided. wherein in the formula (1), Y1, Y2, X, R1, R2, n1, n2 and A+ have the same meanings as defined in the detailed description of the invention. The photoacid generator can maintain an appropriate contact angle at the time of ArF liquid immersion lithography, can reduce defects occurring during liquid immersion lithography, and has excellent solubility in resist solvents and excellent compatibility with resins. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: December 31, 2013
    Assignee: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Jung Hoon Oh, Jin Bong Shin, Tae Gon Kim, Dong Chul Seo
  • Publication number: 20120203024
    Abstract: A photoacid generator represented by the following formula (1), a method for producing the photoacid generator, and a resist composition containing the photoacid generator are provided. wherein in the formula (1), Y1, Y2, X, R1, R2, n1, n2 and A+ have the same meanings as defined in the detailed description of the invention. The photoacid generator can maintain an appropriate contact angle at the time of ArF liquid immersion lithography, can reduce defects occurring during liquid immersion lithography, and has excellent solubility in resist solvents and excellent compatibility with resins. Furthermore, the photoacid generator can be produced by an efficient and simple method using an epoxy compound that is industrially easily available.
    Type: Application
    Filed: February 7, 2012
    Publication date: August 9, 2012
    Applicant: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Jung Hoon OH, Jin Bong Shin, Tae Gon Kim, Dong Chul Seo
  • Publication number: 20120189963
    Abstract: A water-soluble resin composition for forming fine patterns comprising water-soluble polymer represented by Chemical Formula 1 as below and the first water-soluble solvent, is coated and heated on a photoresist layer having at least one contact hole to reduce a size of the at least one contact hole. (In Chemical Formula 1, each of R1, R2, R3 and R5 independently represents an alkyl group of C1-30 or an cyclo alkyl group of C3-30 which respectively have one selected from the group consisting of hydrogen, an ether group, an ester group, a carbonyl group, an acetal, an epoxy group, a nitril group, an amine group, and an aldehyde group; each of R4, R6, R7 and R8 independently represents hydrogen or a methyl group; n represents an integer of 0 to 5; a represents a real number of 0.05 to 0.5; each of b, c and d respectively represents a real number of 0 to 0.
    Type: Application
    Filed: June 29, 2011
    Publication date: July 26, 2012
    Applicant: KOREA KUMHO PETROCHEMICAL CO., LTD.
    Inventors: Sang Wook PARK, So Jung PARK, Dong Chul SEO
  • Publication number: 20120172606
    Abstract: A sulfonium compound represented by formula (1), a photo-acid generator, and a method for producing a sulfonium compound are provided: wherein X represents an electron-donating group; R1 and R2 each represent an alkyl group, a cycloalkyl group, or the like; R3 and R4 each represent an arylene group or a heteroarylene group; R5 and R6 each represent an alkyl group, a cycloalkyl group, or the like; and A? and B? are anions that are different from each other. The sulfonium compound, when used as a photo-acid generator, can produce a uniform and excellent resist pattern.
    Type: Application
    Filed: December 30, 2011
    Publication date: July 5, 2012
    Applicant: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Hyun Sang JOO, Dong Chul Seo, Dae Kyung Yoon, Dae Hyeon Shin
  • Patent number: 7326520
    Abstract: The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window:
    Type: Grant
    Filed: April 18, 2005
    Date of Patent: February 5, 2008
    Assignee: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Hyun-Sang Joo, Joo-Hyeon Park, Dong-Chul Seo, Young-Taek Lim, Seong-Duk Cho, Ji-Young Song, Kyoung-Mun Kim
  • Patent number: 7285373
    Abstract: A chemically amplified resist composition includes a novel polymer, a photoacid generator, and a solvent. The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.
    Type: Grant
    Filed: September 14, 2004
    Date of Patent: October 23, 2007
    Assignee: Korea Kumho Petrochemical Co., Ltd
    Inventors: Young-Taek Lim, Joo-Hyeon Park, Dong-Chul Seo, Chang-Min Kim, Seong-Duk Cho, Hyun-Sang Joo
  • Publication number: 20060057490
    Abstract: The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window:
    Type: Application
    Filed: April 18, 2005
    Publication date: March 16, 2006
    Applicant: Korea Kumbo Petrochemical Co., Ltd.
    Inventors: Hyun-Sang Joo, Joo-Hyeon Park, Dong-Chul Seo, Young-Taek Lim, Seong-Duk Cho, Ji-Young Song, Kyoung-Mun Kim
  • Publication number: 20050153236
    Abstract: The present invention provides a chemically amplified resist composition including a novel polymer, a photoacid generator, and a solvent: The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.
    Type: Application
    Filed: September 14, 2004
    Publication date: July 14, 2005
    Applicant: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Young-Taek Lim, Joo-Hyeon Park, Dong-Chul Seo, Chang-Min Kim, Seong-Duk Cho, Hyun-Sang Joo
  • Patent number: 6369143
    Abstract: A radiation-sensitive polymer and a chemical amplification resist composition based on the polymer, which can be easily controlled in sensitivity by regulating the content and kind of the carboxylic acid-grafted norbornene derivatives in the matrix polymer and is superior in adherence to substrate and dry etch resistance, so that it can be formed into resist patterns improved in transparency, photosensitivity and resolution by use of KrF or ArF excimer lasers. The polymer is represented by the formula I: wherein, X is an acid-dissociable grafted norbornene derivative selected from the group consisting of the formulas II and III; Y is a carboxylic acid-grafted norbornene derivative represented by the formula IV, and l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=l and 0.4≦o≦0.
    Type: Grant
    Filed: June 21, 1999
    Date of Patent: April 9, 2002
    Assignee: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Joo-Hyeon Park, Seong-Ju Kim, Dong-Chul Seo, Sun-Yi Park
  • Patent number: 6358666
    Abstract: This invention relates to a chemically amplified positive photoresist composition comprising a multi copolymer copolymer whose repeating units is represented by the following formula I, a low molecular additive represented by the following formula 2 or 3, an acid generator and a solvent wherein the repeating units comprising X and Y are independent monomers, respectively, selected from the group consisting of the following formulae (II), (III) and (IV):
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: March 19, 2002
    Assignee: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Dong Chul Seo, Sun Yi Park, Joo Hyeon Park, Seong Ju Kim
  • Patent number: 6268106
    Abstract: A chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 &mgr;m or less. This composition is based on a copolymer of the formula I, ranging, in polystyrene-reduced weight average molecular weight, from 3,000 to 50,000 with a molecular weight distribution (Mw/Mn) of 1.0 to 2.
    Type: Grant
    Filed: June 21, 1999
    Date of Patent: July 31, 2001
    Assignee: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Joo-Hyeon Park, Dong-Chul Seo, Sun-Yi Park, Seong-Ju Kim
  • Patent number: 6146810
    Abstract: A copolymer represented by the formula I and a chemical amplification resist containing the copolymer, which can be easily controlled in sensitivity by regulating the content and kind of the norbornene derivatives in the matrix polymers in addition to being superior in adherence to substrate and dry etch resistance: ##STR1## wherein, X is selected from the group consisting of the following general formulas II, III and IV; and, l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=1 and 0.4.ltoreq.o.ltoreq.0.
    Type: Grant
    Filed: June 21, 1999
    Date of Patent: November 14, 2000
    Assignee: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Dong-Chul Seo, Sun-Yi Park, Joo-Hyeon Park, Seong-Ju Kim
  • Patent number: 6111143
    Abstract: This invention relates to a sulfonium salt, including its manufacturing method, which is effectively used as a photoacid initiator or radical photoinitiator during polymerization and a photoacid generator, leaving the protection groups of organic compounds, especially as an useful photoacid generator of the chemically amplified photoresist employed in semiconductor materials. Since the sulfonium salt of this invention, so prepared via one-step reaction between sulfoxide compound and aromatic compound in the presence of perfluoroalkanesulfonic anhydride, has the advantages in that by overcoming some shortcomings of the prior art to prepare the sulfonium salt via two steps using Grinard reagent, this invention may provide a novel sulfonium salt with higher yield which cannot be achieved in the prior art and also to prepare even any conventional sulfonium salt having better yield.
    Type: Grant
    Filed: August 27, 1998
    Date of Patent: August 29, 2000
    Assignee: Korea Kumbo Petrochemical Co., Ltd.
    Inventors: Joo-Hyeon Park, Dong-Chul Seo, Sun-Yi Park, Seong-Ju Kim