Abstract: An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.

Abstract: A lower electrode wafer chuck of an etching machine comprises an upper stage, configured for placing a wafer, coupled to a lower stage. The upper stage includes a lower surface that includes a cooling liquid circulation groove, and an upper surface that includes a cooling gas distribution groove and a cooling gas outlet hole. The lower stage includes a cooling liquid inlet, a cooling liquid outlet and a cooling gas inlet hole, the cooling liquid inlet and the cooling liquid outlet both being communicated with the cooling liquid circulation groove. To cool a lower electrode, cooling liquid enters the cooling liquid circulation groove from the cooling liquid inlet, and then flows out the cooling liquid outlet. To cool a wafer on the upper stage, cooling gas enters from the cooling gas inlet hole, passes through the cooling gas outlet hole, and diffuses into the cooling gas distribution groove.