Abstract: A memory device includes: a gate stack on a substrate, including insulation layers and gate electrodes alternately stacked in a vertical direction, and defining a through hole in the vertical direction; and a pillar structure in the through hole, the pillar structure including: a plurality of channel portions in the through hole to face the gate electrodes and having annular horizontal cross-sections; a plurality of conductive layers in the through hole to face the insulation layers, having annular horizontal cross-sections, and having inner walls protruding toward a center of the through hole with respect to inner walls of the channel portions; and a variable resistance material layer on the inner walls of the channel portions and the inner walls of the conductive layers, in the through hole, and a first portion of the variable resistance material layer overlaps the conductive layers in the vertical direction.

Abstract: A method of forming a germanium antimony tellurium (GeSbTe) layer includes forming a germanium antimony (GeSb) layer by repeatedly performing a GeSb supercycle; and forming the GeSbTe layer by performing a tellurization operation on the GeSb layer, wherein the GeSb supercycle includes performing at least one GeSb cycle; and performing at least one Sb cycle, the GeSbTe has a composition of Ge2Sb2+aTe5+b, in which a and b satisfy the following relations: ?0.2<a<0.2 and ?0.5<b<0.5.

Abstract: A variable resistance memory device includes a stacking pattern disposed on a substrate, a vertical structure extends in a first direction, which is perpendicular to a top surface of the substrate, and penetrates the stacking pattern, and a horizontal conductive line disposed adjacent to the stacking pattern and extending in a second direction that is parallel to the top surface of the substrate. The vertical structure includes a vertical conductive line penetrating the stacking pattern, a variable resistance element enclosing the vertical conductive line, and a selection element interposed between the vertical conductive line and the variable resistance element. Each of the vertical conductive line, the variable resistance element, and the selection element extends in the first direction. The stacking pattern is electrically connected to the horizontal conductive line and extends along the horizontal conductive line and in the second direction.

Abstract: Disclosed is a method for preparing a liposome formulation. In the disclosed method, a lipid fraction is dissolved in an organic solvent. The solution including a bioactive component and the lipid fraction, together with a carrier, is put in a reaction vessel, and a supercritical fluid is introduced thereto, so as to prepare particles coated with the bioactive component-lipid. The supercritical fluid is discharged by compression to obtain proliposome particles, and then the proliposome particles are hydrated by an aqueous solution including water so as to form a liposome solution. Preferably, the formulation may include one or more bioactive components. As required, the liposome formulation may be further processed by methods such as particle size reduction, removal of organic solvent, and freeze-drying. The preparation method can be easily carried out at a laboratory scale. Furthermore, the same method can be employed in liposome formulation preparation in mass production, or at a commercial scale.

Abstract: Disclosed is a method for preparing a liposome formulation. In the disclosed method, a lipid fraction is dissolved in an organic solvent. The solution including a bioactive component and the lipid fraction, together with a carrier, is put in a reaction vessel, and a supercritical fluid is introduced thereto, so as to prepare particles coated with the bioactive component-lipid. The supercritical fluid is discharged by compression to obtain proliposome particles, and then the proliposome particles are hydrated by an aqueous solution including water so as to form a liposome solution. Preferably, the formulation may include one or more bioactive components. As required, the liposome formulation may be further processed by methods such as particle size reduction, removal of organic solvent, and freeze-drying. The preparation method can be easily carried out at a laboratory scale. Furthermore, the same method can be employed in liposome formulation preparation in mass production, or at a commercial scale.