Abstract: An embodiment sulfur dioxide-based inorganic electrolyte is provided in which the sulfur dioxide-based inorganic electrolyte is represented by a chemical formula M·(A1·Cl(4-x)Fx)z·ySO2. In this formula, M is a first element selected from the group consisting of Li, Na, K, Ca, and Mg, A1 is a second element selected from the group consisting of Al, Fe, Ga, and Cu, x satisfies a first equation 0?x?4, y satisfies a second equation 0?y?6, and z satisfies a third equation 1?z?2.

Abstract: Some systems compress data utilized by a user mode software without the user mode software being aware of any compression taking place. To maintain that illusion, such systems prevent user mode software from being aware of and/or accessing the underlying compressed states of the data. While such an approach protects proprietary compression techniques used in such systems from being deciphered, such restrictions limit the ability of user mode software to use the underlying compressed forms of the data in new ways. Disclosed herein are various techniques for allowing user-mode software to access the underlying compressed states of data either directly or indirectly. Such techniques can be used, for example, to allow various user-mode software on a single system or on multiple systems to exchange data in the underlying compression format of the system(s) even when the user mode software is unable to decipher the compression format.

Abstract: Some systems compress data utilized by a user mode software without the user mode software being aware of any compression taking place. To maintain that illusion, such systems prevent user mode software from being aware of and/or accessing the underlying compressed states of the data. While such an approach protects proprietary compression techniques used in such systems from being deciphered, such restrictions limit the ability of user mode software to use the underlying compressed forms of the data in new ways. Disclosed herein are various techniques for allowing user-mode software to access the underlying compressed states of data either directly or indirectly. Such techniques can be used, for example, to allow various user-mode software on a single system or on multiple systems to exchange data in the underlying compression format of the system(s) even when the user mode software is unable to decipher the compression format.

Abstract: The present disclosure is directed to a process to partially or fully suppress, or limit, pixel coloration errors. These pixel coloration errors, represented by small noise values, can be introduced during signal processing of high dynamic range (HDR) video signals. Converting visual content to a half precision floating point representation, for example, FP16, can introduce small amounts of signal noise due to value rounding. The noise can be multiplied and accumulated during HDR signal processing resulting in visual artifacts and degraded image quality. The disclosure can detect these noise amounts in pixel color component values, and suppress, or partially suppress, the noise to prevent the noise from accumulating during subsequent HDR signal processing.

Abstract: The present disclosure is directed to a process to partially or fully suppress, or limit, pixel coloration errors. These pixel coloration errors, represented by small noise values, can be introduced during signal processing of high dynamic range (HDR) video signals. Converting visual content to a half precision floating point representation, for example, FP16, can introduce small amounts of signal noise due to value rounding. The noise can be multiplied and accumulated during HDR signal processing resulting in visual artifacts and degraded image quality. The disclosure can detect these noise amounts in pixel color component values, and suppress, or partially suppress, the noise to prevent the noise from accumulating during subsequent HDR signal processing.

Abstract: Disclosed are a semiconductor device and a manufacturing method thereof. The semiconductor device includes a gate electrode in a first trench in a semiconductor substrate, a ground area in a second trench facing the gate electrode, and source and drain areas in third and fourth trenches at ends of the gate electrode, respectively. A transistor having a micro-size is obtained, so that a semiconductor chip having a micro-size and a high integration degree may be realized.