Abstract: A variable grille apparatus can adjust a flow rate of air flowing through a grille and upgrade an opening/closing operation when adjusting the flow rate of the air, thereby improving merchantability. In addition, by diversifying the opening/closing operation of the grille such as sequentially operating or simultaneously operating the opening/closing operation of the grille, it is possible to upgrade the opening/closing operation of the grille, diversify the exterior design, and secure the flow rate of air through the optimization of the structural arrangement.

Abstract: An active air skirt apparatus controls an airflow flowing to a lower side of a mobility device according to a traveling state of the mobility device, thereby securing optimal aerodynamic performance. In addition, disclosed herein is an active air skirt apparatus, which stably moves a flap for controlling the airflow when a vehicle travels at high speed, thereby improving durability and reliability.

Abstract: A vehicle body frame includes a lower frame fixed to a floor of a vehicle to define a lower region of an internal space in the vehicle, a roof frame connected to an upper portion of the lower frame to define an upper region of the internal space, configured to slid in a vertical direction of the vehicle with respect to the lower frame, to expand the internal space upwards when the roof frame slides upwards, a lower door frame forming a lower portion of a vehicle door, and an upper door frame connected to the lower door frame to form an upper portion of the vehicle door, and configured to slid together with the roof frame to expand the vehicle door upwards when the roof frame slides upwards.

Abstract: A vehicle configured for container-swapping, includes: a main frame including a pair of drive modules spaced in a forward/backward direction of the vehicle, and a connecting portion extending in the forward/backward direction of the vehicle to connect the pair of drive modules so that a coupling space is formed therebetween; a container module selectively inserted into the coupling space of the main frame; and a coupling portion configured to couple the main frame and the container to each other while the container module is inserted into the coupling space of the main frame, wherein a driving portion operates and moves the main frame so that the container module is inserted into the coupling space of the main frame.

Abstract: A vehicle light includes: a light lens having a base panel made of a transparent plastic material, an outer paint layer disposed on an outer surface of the base panel, and an inner paint layer disposed on an inner surface of the base panel and including a light-transmitting hole formed therein; and a light source installed to be spaced apart from the light lens, in which light from the light source is transmitted out of the light lens through the light-transmitting hole and the base panel.

Abstract: A variable grille apparatus controls a flow rate of air circulated through the grille. Commercial properties are improved through an advanced opening and closing operation during adjustment of the air flow rate. The opening and closing operation of the grille is diversified, such as by sequential or simultaneous operation, so that the sense of operation is enhanced, an exterior design is diversified, and the air flow is secured through an optimization of the structural arrangement.

Abstract: A personal mobility may include a body provided with an upper plate portion; a wheel connected to the body to be driven; and a battery provided in the body or the wheel and configured to provide driving energy to the wheel, wherein the mobility is configured to be stored in or drawn out of a vehicle, and the battery is configured to be charged or discharged in association with a high-voltage battery of the vehicle.

Abstract: A freight vehicle on which a drone is docked, may include: a transfer device provided in the vehicle and configured to move up and down between an internal space of the vehicle and a roof to receive freight from the drone through the roof of the vehicle or transfer freight to the drone; and a loadspace separated, as a portion of the internal space of the vehicle, from a space where the transfer device is provided and including an open portion formed on a side or a rear of the vehicle, and onto which the freight is loaded.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

Abstract: The present invention relates to a technology for increasing the reliability of measurement by preventing the contamination of a self-plasma chamber provided in order to monitor a deposition operation performed in a process chamber, and has a shielding means capable of preventing an inflow of negative electrode material, which is generated by a sputtering phenomenon, into a discharge chamber when a positive charge of plasma, which is generated in the self-plasma chamber, collides with a negative electrode.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

Abstract: An integrated circuit (IC) device includes a pair of fin-shaped active areas that are adjacent to each other with a fin separation area therebetween, the pair of fin-shaped active areas extend in a line, and a fin separation insulating structure in the fin separation area, wherein the pair of fin-shaped active areas includes a first fin-shaped active area having a first corner defining part of the fin separation area, and wherein the fin separation insulating structure includes a lower insulating pattern that covers sidewalls of the pair of fin-shaped active areas, and an upper insulating pattern on the lower insulating pattern to cover at least part of the first corner, the upper insulating pattern having a top surface at a level higher than a top surface of each of the pair of fin-shaped active areas.

Abstract: Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.

Abstract: A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.

Abstract: A semiconductor device includes first through fourth active fins, which extend alongside one another in a first direction; and a field insulating film that covers lower portions of the first through fourth active fins, the first and second active fins protrude from the field insulating film at a first height, the third active fin protrudes from the field insulating film at a second height different from the first height, and an interval between the first and second active fins is different from an interval between the third and fourth active fins.

Abstract: An integrated circuit (IC) device includes a pair of fin-shaped active areas that are adjacent to each other with a fin separation area therebetween, the pair of fin-shaped active areas extend in a line, and a fin separation insulating structure in the fin separation area, wherein the pair of fin-shaped active areas includes a first fin-shaped active area having a first corner defining part of the fin separation area, and wherein the fin separation insulating structure includes a lower insulating pattern that covers sidewalls of the pair of fin-shaped active areas, and an upper insulating pattern on the lower insulating pattern to cover at least part of the first corner, the upper insulating pattern having a top surface at a level higher than a top surface of each of the pair of fin-shaped active areas.