Patents by Inventor Donghwan Ahn
Donghwan Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10976490Abstract: There is provided an optoelectronic device including: first and second optical waveguides arranged on a bulk silicon substrate to be spaced apart from each other in a first direction parallel to an upper surface of the bulk silicon substrate; and an active region interposed between the first and second optical waveguides on the bulk silicon substrate such that one side of the active region contacts the first optical waveguide and the other side contacts the second optical waveguide portion, wherein the first and second optical waveguides and the active region include germanium-silicon (GeSi) alloy.Type: GrantFiled: March 14, 2019Date of Patent: April 13, 2021Assignee: KOOKMIN UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATIONInventor: Donghwan Ahn
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Publication number: 20200200970Abstract: There is provided an optoelectronic device including: first and second optical waveguides arranged on a bulk silicon substrate to be spaced apart from each other in a first direction parallel to an upper surface of the bulk silicon substrate; and an active region interposed between the first and second optical waveguides on the bulk silicon substrate such that one side of the active region contacts the first optical waveguide and the other side contacts the second optical waveguide portion, wherein the first and second optical waveguides and the active region include germanium-silicon (GeSi) alloy.Type: ApplicationFiled: March 14, 2019Publication date: June 25, 2020Applicant: KOOKMIN UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATIONInventor: Donghwan AHN
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Patent number: 9915782Abstract: An optical interconnection device including: a first element layer formed on a substrate; a second element layer disposed on the first element layer and receiving an optical signal; and a mode converter interposed between the first element layer and the second element layer, and eliminating a difference between an effective refractive index of the first element layer and an effective refractive index of the second element layer and match a mode profile, wherein the first element layer, the mode converter, and the second element layer are sequentially disposed on respective planes spaced apart from each other on the substrate, and one end of the mode converter overlaps a part of the second element layer, and the other end of the mode converter overlaps a part of the first element layer.Type: GrantFiled: November 18, 2016Date of Patent: March 13, 2018Assignee: KOOKMIN UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATIONInventors: Donghwan Ahn, Yoonyoung Bae
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Publication number: 20180039022Abstract: An optical interconnection device including: a first element layer formed on a substrate; a second element layer disposed on the first element layer and receiving an optical signal; and a mode converter interposed between the first element layer and the second element layer, and eliminating a difference between an effective refractive index of the first element layer and an effective refractive index of the second element layer and match a mode profile, wherein the first element layer, the mode converter, and the second element layer are sequentially disposed on respective planes spaced apart from each other on the substrate, and one end of the mode converter overlaps a part of the second element layer, and the other end of the mode converter overlaps a part of the first element layer.Type: ApplicationFiled: November 18, 2016Publication date: February 8, 2018Applicant: KOOKMIN UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATIONInventors: Donghwan AHN, Yoonyoung BAE
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Patent number: 7715676Abstract: An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.Type: GrantFiled: May 31, 2006Date of Patent: May 11, 2010Assignees: Intel Corporation, Massachusetts Institute of TechnologyInventors: Jun-Fei Zheng, Kazumi Wada, Jurgen Michel, Donghwan Ahn, Lionel C. Kimerling
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Publication number: 20100038689Abstract: A method and semiconductor device for integrating the fabrication of a photodetector with the fabrication of a CMOS device on a SOI substrate. The SOI substrate is divided into two regions, a CMOS region and an optical detecting region. After the CMOS device is fabricated in the CMOS region, the optical detecting region is patterned and etched through the top silicon layer and the buried oxide layer to the base silicon layer. The pattern is etched to a depth so that after a material of a photodetector is deposited in the etched pattern, the material grows to the surface level of the SOI substrate. After the formation of a photodetector structure in the optical detecting region, the metallization process is performed on the CMOS device and the photodetector. In this manner, the fabrication of a photodetector is integrated with the fabrication of a CMOS device on the SOI substrate.Type: ApplicationFiled: August 13, 2008Publication date: February 18, 2010Applicant: Board of Regents, The University of Texas SystemInventors: Donghwan Ahn, Sanjay Banerjee, Joe C. Campbell
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Patent number: 7305157Abstract: High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.Type: GrantFiled: November 8, 2005Date of Patent: December 4, 2007Assignee: Massachusetts Institute of TechnologyInventors: Donghwan Ahn, Jifeng Liu, Jurgen Michel, Lionel C. Kimerling
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Patent number: 7266263Abstract: High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.Type: GrantFiled: November 8, 2005Date of Patent: September 4, 2007Assignee: Massachusetts Institute of TechnologyInventors: Donghwan Ahn, Jifeng Liu, Jurgen Michel, Lionel C. Kimerling
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Publication number: 20070104410Abstract: High-speed optoetectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.Type: ApplicationFiled: November 8, 2005Publication date: May 10, 2007Applicant: Massachusetts Institute of TechnologyInventors: Donghwan Ahn, Jifeng Liu, Jurgen Michel, Lionel Kimerling
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Publication number: 20070104411Abstract: High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.Type: ApplicationFiled: November 8, 2005Publication date: May 10, 2007Applicant: Massachusetts Institute of TechnologyInventors: Donghwan Ahn, Jifeng Liu, Jurgen Michel, Lionel Kimerling
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Publication number: 20070104441Abstract: High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.Type: ApplicationFiled: November 8, 2005Publication date: May 10, 2007Applicant: Massachusetts Institute of TechnologyInventors: Donghwan Ahn, Jifeng Liu, Jurgen Michel, Lionel Kimerling
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Patent number: 7146074Abstract: An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.Type: GrantFiled: June 14, 2004Date of Patent: December 5, 2006Assignee: Intel CorporationInventors: Jun-Fei Zheng, Kazumi Wada, Jurgen Michel, Donghwan Ahn, Lionel C. Kimerling
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Publication number: 20060233505Abstract: An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.Type: ApplicationFiled: May 31, 2006Publication date: October 19, 2006Inventors: Jun-Fei Zheng, Kazumi Wada, Jurgen Michel, Donghwan Ahn, Lionel Kimerling
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Patent number: 7065271Abstract: An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.Type: GrantFiled: October 25, 2002Date of Patent: June 20, 2006Assignee: Intel CorporationInventors: Jun-Fei Zheng, Kazumi Wada, Jurgen Michel, Donghwan Ahn, Lionel C. Kimerling
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Publication number: 20060111524Abstract: A high-activity catalyst used to prepare polyethylene and a method of preparing polyolefin using the same are provided. When preparing the high-activity catalyst, a specific halogenated hydrocarbon is added to control the electrical properties of catalytic active sites and provide a large steric space around the catalytic active sites. Therefore, polyolefin with a wide range of molecular weights can be synthesized using the catalyst.Type: ApplicationFiled: November 3, 2005Publication date: May 25, 2006Inventors: Yiyoung Choi, Churlyoung Park, Hyuckju Kwon, Donghwan Ahn, Soonyeel Lee
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Publication number: 20040240788Abstract: An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.Type: ApplicationFiled: June 14, 2004Publication date: December 2, 2004Inventors: Jun-Fei Zheng, Kazumi Wada, Jurgen Michel, Donghwan Ahn, Lionel C. Kimerling
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Publication number: 20040081399Abstract: An optical grating is disposed on a waveguide to redirect light from the interior of the waveguide through the opposite side of the waveguide from the grating. In one embodiment the waveguide, the grating, and an optical sensor are combined in a single monolithic structure. In another embodiment, an absorbing layer is directly connected to the waveguide in the region of the grating. In still another embodiment, efficiency of the grating is improved by having a high index contrast between the refractive index of the grating and the refractive index of the cladding disposed over the grating, and by having an appropriately sized discontinuity in the grating.Type: ApplicationFiled: October 25, 2002Publication date: April 29, 2004Inventors: Jun-Fei Zheng, Kazumi Wada, Jurgen Michel, Donghwan Ahn, Lionel C. Kimerling