Abstract: A thin-film transistor (TFT) array substrate includes: a driving TFT provided on a substrate; and a switching TFT provided on the substrate and including: a switching semiconductor layer including a switching channel region, a switching source region, and a switching drain region; and a switching source electrode and a switching drain electrode contacting the switching semiconductor layer. The switching source electrode includes a source contact portion contacting the switching source region, and the switching drain electrode includes a drain contact portion contacting the switching drain region. The source contact portion is doped with ions that are different from ions of the switching source region and the drain contact portion is doped with ions that are different from ions of the switching drain region.

Abstract: A display device and method of manufacturing the same are disclosed. In one aspect, the display device includes a first line extending in a first direction, a second line extending in a second direction, and a storage capacitor electrically connected to at least one of the first line and the second line. The first line includes a first metal pattern layer extending in the first direction, an intermediate insulating layer formed over the first metal pattern layer, and a second metal pattern layer formed over the first metal pattern layer and the intermediate insulating layer. The second metal pattern layer extends in the first direction. The first line also includes a third metal pattern layer electrically connecting the first metal pattern layer to the second metal pattern layer via a contact hole.

Abstract: A display device is disclosed. In one aspect, the device includes a substrate including a display area displaying an image via a plurality of pixels and a non-display area adjacent to the display area. The device also includes a first line and a second line in the display area. The display device also includes a first connection line and a second connection line in the non-display area, wherein the first and second connection lines are respectively connected to the first and second lines and extend in different directions to cross each other. The display device also includes an insulating layer formed over the substrate and including a first portion and a second portion, the first portion corresponding to the display area and the second portion corresponds to a crossing area where the first and second connection lines cross each other, the thickness of the first and second portions are different.

Abstract: A thin film transistor (TFT) circuit panel comprises a substrate and first and second patterned multi-layer structures formed over the substrate. The first patterned multi-layer structure is to provide a driving TFT and a storage capacitor, and comprises: a semiconductor layer, a first electrode over the semiconductor layer, a second electrode disposed over the first electrode and insulated from the first electrode, a storage insulating layer disposed between the first electrode and the second electrode, and a driving gate insulating layer disposed between the semiconductor layer and the first electrode. The second patterned multi-layer structure is spaced from the first multi-layer structure, and comprises: a lower patterned insulating layer, a patterned conductive layer and a top patterned insulating layer. An organic insulating material is filled between the first and second patterned multi-layer structures.

Abstract: A thin film transistor includes an active pattern formed on a substrate; a gate pattern formed on the active pattern and comprising a gate electrode and a gate line; a gate insulating layer disposed between the gate pattern and the active pattern; a source electrode that overlaps a first side of the active pattern and contacts a data line; a drain electrode that overlaps a second side of the active pattern and is separated from the source electrode; a channel area formed in an area where the gate line and an active line of the active pattern overlap each other; and a gate line modifying unit formed in the channel area by changing a linear shape of the gate line.

Abstract: An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the OLED display includes a plurality of pixels, each of the pixels including at least one wiring configured to receive an electrical signal and a storage capacitor formed on the same layer as the wiring. The wiring includes a first conductive pattern layer, an intermediate insulation pattern layer, and a second conductive pattern layer that are sequentially stacked. The first and second conductive pattern layers are electrically connected to each other through a first via hole.

Abstract: A display panel includes a base substrate including a pixel area and a peripheral area, a semiconductor layer disposed on a portion of the base substrate, a display element disposed in the pixel area, and a thin film transistor which controls the display element and includes an input electrode, an output electrode and a control electrode, in which the semiconductor layer includes a first portion disposed on the input electrode of the first thin film transistor, a second portion disposed on the output electrode of the first thin film transistor, and a third portion which connects the first portion and the second portion, overlaps the control electrode of the first thin film transistor, and defines a channel of the first thin film transistor.

Abstract: A display panel includes a base substrate, on which a pixel area and a peripheral area are defined, a semiconductor pattern disposed on the base substrate, a display element disposed in the pixel area of the base substrate and a first thin film transistor configured to control the display element, where the first thin film transistor includes an input electrode a first portion of the semiconductor pattern and an output electrode disposed on a second portion of the semiconductor pattern, a third portion of the semiconductor pattern between the first portion and the second portion; and a control electrode disposed on the third portion and insulated from the third portion.

Abstract: The present invention relates to novel Pcr family genes that confer tolerance to heavy metals to plants and microorganisms. More particularly, the present invention relates to novel Pcr family genes that confer tolerance to cadmium. The invention also relates to plant and microorganisms transformed with any of the Pcr genes thereby having improved resistance to and increased level of toxic materials, and methods of removing heavy metals from contaminated soil and water contaminated by growing the Pcr-transformed plants on the contaminated soils and water.

Abstract: The present invention relates to novel Pcr family genes which confer tolerance to heavy metals to organisms. More particularly, the present invention relates to novel Pcr family genes which confer tolerance to cadmium. Organisms transformed with any of the Pcr genes thereby have improved resistance to and increased level of toxic materials. Soil and water contaminated with heavy metals can be cleaned in an environment-friendly and economical manner by growing the Pcr-transformed organism, especially a plant transformed with the Pcr gene.