Abstract: A display apparatus can include a substrate having a penetrating area and a separating area, the penetrating area including a substrate hole, a first buffer layer having a first-buffer lower layer, and a first-buffer upper layer, a first thin film transistor including a first semiconductor pattern, a first gate electrode, and a first source electrode and a first drain electrode, a first interlayer insulating film; a second interlayer insulating film, an opening extending through the second interlayer insulating film, the first interlayer insulating film, the first gate insulating film and the first-buffer upper layer, and a separation structure in the opening, the separation structure including a first separation layer having a same stacked structure as the first-buffer upper layer, a second separation layer having a same stacked structure as the first gate insulating film, and a third separation layer having a same stacked structure as the first gate electrode.

Abstract: A display apparatus can include a substrate having a penetrating area and a separating area, the penetrating area including a substrate hole, a first buffer layer having a first-buffer lower layer, and a first-buffer upper layer, a first thin film transistor including a first semiconductor pattern, a first gate electrode, and a first source electrode and a first drain electrode, a first interlayer insulating film; a second interlayer insulating film, an opening extending through the second interlayer insulating film, the first interlayer insulating film, the first gate insulating film and the first-buffer upper layer, and a separation structure in the opening, the separation structure including a first separation layer having a same stacked structure as the first-buffer upper layer, a second separation layer having a same stacked structure as the first gate insulating film, and a third separation layer having a same stacked structure as the first gate electrode.

Abstract: A display apparatus includes a substrate including a penetrating area including a substrate hole, and a separating area surrounding the penetrating area, a first buffer layer including a first-buffer lower layer on the substrate, and a first-buffer upper layer on the first-buffer lower layer, a first TFT including a first semiconductor pattern on the first-buffer upper layer, and a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating film is interposed therebetween, and first source/drain electrodes connected to the first semiconductor pattern, a second TFT, a separation structure disposed in the separating area of the substrate while including a first separation layer having the same stacked structure as the first-buffer upper layer, a second separation layer having the same stacked structure as the first gate insulating film, and a third separation layer having the same stacked structure as the first gate electrode.

Abstract: A display apparatus includes a substrate including a penetrating area including a substrate hole, and a separating area surrounding the penetrating area, a first buffer layer including a first-buffer lower layer on the substrate, and a first-buffer upper layer on the first-buffer lower layer, a first TFT including a first semiconductor pattern on the first-buffer upper layer, and a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating film is interposed therebetween, and first source/drain electrodes connected to the first semiconductor pattern, a second TFT, a separation structure disposed in the separating area of the substrate while including a first separation layer having the same stacked structure as the first-buffer upper layer, a second separation layer having the same stacked structure as the first gate insulating film, and a third separation layer having the same stacked structure as the first gate electrode.