Abstract: A precursor supply system includes a storage tank storing the precursor in a solid state; a transfer pipe connected to the storage tank to transfer the precursor in a solid state; a phase converter connected to the transfer pipe and sublimating the transported solid-state precursor into vapor; a supply pipe connected to the phase converter and transporting a precursor in a vaporous state; and a process chamber disposed adjacently to the phase converter and connected to the supply pipe.

Abstract: Provided is a method of fabricating a semiconductor device including forming a device isolation layer defining active regions on a substrate and forming gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming a trench crossing the active regions in the substrate, forming a conductive layer filling the trench, and performing a heat treatment process on the conductive layer. The conductive layer includes a nitride of a first metal. Nitrogen atoms in the conductive layer are diffused toward an outer surface and a lower surface of the conductive layer by the heat treatment process.