Abstract: A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.

Abstract: A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.

Abstract: A semiconductor device includes a MIM capacitor on a substrate. The MIM capacitor includes a dielectric region and first and second electrodes on opposite sides of the dielectric region. At least one of the first and second electrodes, e.g., an upper electrode, includes an oxygen diffusion blocking material, e.g., oxygen atoms, at a concentration that decreases in a direction away from the dielectric region. The at least one of the first and second electrodes may include a first layer having a first concentration of the oxygen diffusion blocking material and a second layer on the first layer and having a second concentration of the oxygen diffusion blocking material less than the first concentration. The at least one of the first and second electrodes may further include a third layer on the second layer and having a concentration of the oxygen diffusion blocking material less than the second concentration.

Abstract: There is provided an oil-in-water type organogel cosmetic composition having variable transparency, including 0.05% by weight to 50.00% by weight of an oil phase portion, and 50% by weight to 99.95% by weight of a water phase portion on the basis of total weight, wherein the oil phase portion and the water phase portion has a difference in refractive indices within a range of 0.03 to 0.16. The organogel cosmetic composition may be usefully utilized because the composition not only has high formulation stability according to temperature and time, but also enables an optimal application time to be easily determined with the naked eye by controlling the contents of components contained in the water phase portion and the oil phase portion in such a manner that the color of the composition may be changed from opaque ivory white color to transparent color when the composition is applied to skin.

Abstract: A semiconductor device includes a MIM capacitor on a substrate. The MIM capacitor includes a dielectric region and first and second electrodes on opposite sides of the dielectric region. At least one of the first and second electrodes, e.g., an upper electrode, includes an oxygen diffusion blocking material, e.g., oxygen atoms, at a concentration that decreases in a direction away from the dielectric region. The at least one of the first and second electrodes may include a first layer having a first concentration of the oxygen diffusion blocking material and a second layer on the first layer and having a second concentration of the oxygen diffusion blocking material less than the first concentration. The at least one of the first and second electrodes may further include a third layer on the second layer and having a concentration of the oxygen diffusion blocking material less than the second concentration.

Abstract: A clinical decision support system provides a process of multiple data collection related to the targeted disease, a process of collecting the first rule based on the clinical knowledge on the above targeted disease, a process of collecting the second rule with application of decision making tree on the above multiple data, a process of deriving the first probability of testing data using the above first rule and fuzzy function, a process of deriving the second probability with application of above testing on the above second rule and a process of integrated analysis suggesting the risk level of targeted disease by deriving the integrated analysis data through integrated analyzing on the above first probability and second probability data.

Abstract: A method and system provide personalized dietary compliance rate based on health information. The method may include: (a) transmitting health information from a hospital's information system to a service operating server; (b) identifying a disease using the health information by the service operating server; (c) selecting food in a user's terminal and determining the degree of correlation between the disease and nutrients of the selected food; and (d) determining dietary compliance rate based on the degree of correlation and providing the dietary compliance rate and the nutritional information of the food to the user's terminal. Dietary compliance rate can be provided via a mobile device and web, thus remote patient monitoring is possible, and consultation procedures are simplified using system's care information and on-line real-time Q & A. Additionally, due to continuous care, both physical and mental stability can be provided, increasing a patient's confidence.

Abstract: Disclosed is a hypertension monitoring and notification device based on context information, which includes a data gain and storage unit for storing bio information of a user, context data, and weather and health information; a user context analysis unit for deducing context information of the user from the bio information and the context data to analyze context necessary for measuring hypertension; a specific hypertension analysis unit for analyzing specific hypertension using the context information; a blood pressure grade analysis unit for determining a blood pressure grade via the analyzed context information to deduce blood pressure signal light information and to transmit a recommendation content; and a result output and notification unit for outputting and notifying the user and the doctor of the bio information, the blood pressure signal light information, the specific hypertension information, and the context information.

Abstract: A wiring structure of a semiconductor device comprises an insulating interlayer, a plug and a conductive pattern. The insulating interlayer has an opening therethrough on a substrate. The plug includes tungsten and fills up the opening. The plug is formed by a deposition process using a reaction of a source gas. A conductive pattern structure makes contact with the plug and includes a first tungsten layer pattern and a second tungsten layer pattern. The first tungsten layer pattern is formed by the deposition process. The second tungsten layer pattern is formed by a physical vapor deposition (PVD) process.

Abstract: A MIM capacitor can include a doped polysilicon contact plug in an interlayer insulating film. A lower electrode of the MIM capacitor includes a transition metal nitride film is on the doped polysilicon contact plug. A transition metal silicide film is between the doped polysilicon contact plug and the transition metal nitride film.

Abstract: A MIM capacitor can include a doped polysilicon contact plug in an interlayer insulating film. A lower electrode of the MIM capacitor includes a transition metal nitride film is on the doped polysilicon contact plug. A transition metal silicide film is between the doped polysilicon contact plug and the transition metal nitride film.

Abstract: A preliminary metal layer having a first thickness is formed on a substrate. A surface of the preliminary metal layer having uneven portions is etched to remove the uneven portions and to form a metal layer having an improved surface morphology. Therefore, shorts caused by the surface morphology of a metal layer occur less frequently and the semiconductor fabricating yield improves.

Abstract: A disk changer includes a round roulette having three receiving planes, three sets of identification throughholes for detecting an identification number of the receiving plane and three sets of start/stop throughholes, therein each of the receiving planes has an elongated hole, a holder chuck, a light source, attached to a bottom surface of the holder chuck, for generating a light beam, a tray for supporting the round roulette and a photo sensor, mounted on top of the tray, for detecting the light beam. In the disk changer, the three sets of identification throughholes and the three sets of start/stop throughholes in the round roulette are formed on the circle path which intersects the centers of the center holes, thereby allowing the disk changer to detect both of the identification signal and the disk loading detection signal by using a photo sensor.

Abstract: A method for determining a loading status of a disk on a round roulette utilizes a pulse signal to control the position of the round roulette. In the method, the pulse signal includes start/end codes, a first and a second identification pulse(ID-1, ID-2) and a disk loading detection pulse(DLDP), wherein the start/stop codes, the ID-1 and ID-2 is used for controlling the position of the round roulette and the DLDP is used for detecting the disk loade on the round roulette. In the inventive disk changer includes a function for detecting whether a disk is adequately loaded on a specific receiving plane of the round roulette or not. This is achieved by comparing a first time period between the falling edge time of an ID-1 and the rising edge time of a DLDP with a second time period between the falling edge time of the DLDP and the rising edge time of an ID-2, thereby allowing the disk changer to check an adequate loading of the disk on a round roulette.

Abstract: Rotation of a tray roulette for use in a disk changer is controlled by using disk ID codes, a start code and an end code, each code being produced while a scanner electrode contacts ID electrodes, start electrodes and end electrodes as the tray roulette rotates; specifically, the method generates fixed voltages while the scanner electrode contacts the ID electrodes, the start electrodes and the end electrodes; produces the ID codes, the start code and the end code by converting the fixed voltages received from the ID electrodes, the start electrodes and the end electrodes; and controls the rotation of the tray roulette by using the ID codes in order to rotate and stop the tray roulette at a pickup position.

Abstract: A disk roulette controller effectively controls the rotation of a tray roulette employing an electrode contact technique for use in a disk changer. When a user's instruction to search a target dish is received, a drive signal is supplied to a motor, thereby revolving the tray roulette in a predetermined direction. Next, a pulse width modulation (PWM) and a one-shot pulse signal are generated in response to a pulse signal indicating whether or not a scanner electrode contacts an end electrode of the target dish. In response to the PWM signal, the rotation speed of the revolving tray roulette is reduced and, thereafter, in response to the one-shot pulse signal, the tray roulette is stopped at a pickup position.