Abstract: The present invention belongs to the field of drug preparation and detection, and particularly discloses a preparation method for a Eucommia ulmoides Oliv. leaf extract. The extract is obtained from Eucommia ulmoides Oliv. leaves (the mixture of the Eucommia ulmoides Oliv. leaves and Eucommia ulmoides Oliv. male flower) by enzymolysis and extraction of ethanol and water, and can effectively solve the problem that the extract is not easy to spray dry (the Eucommia ulmoides Oliv. leaves contain colloidal substances). The pharmacodynamic experiment proves that the Eucommia ulmoides Oliv. leaf extract has good effect of protecting the health of the renal function. The present invention also develops a detection method for the extract, which not only realizes the quality control of the extract, but also has the advantages of good repeatability and stability.

Abstract: An electronic device includes: a foam is located below an OLED display, and a film is located below the foam. Multiple bridge circuits are disposed on the film. Each bridge circuit includes two parallel branches. A first branch includes a first and a third resistor. A second branch includes a second and a fourth resistor. At least one of the four resistors is bonded to the foam. At least one resistor is not bonded to the foam. The resistor that is bonded to the foam is made from a first material. A strain sensitivity coefficient of the first material is greater than 100. A film area in which the resistor that is bonded to the foam is located is covered by a second material. A Young's modulus of the second material is greater than 30.

Abstract: An antenna adjustment system and a base station, where the antenna adjustment system includes an inertial feedback unit configured to detect a swing angle of an antenna when the antenna swings with a housing, and send an angle signal to a controller, an actuator and an elastic element configured to control an auxiliary board to rotate back in a direction opposite to a swing direction of the housing in order to counteract deflection caused by swing of the housing of the antenna fastened to the auxiliary board. The actuator is driven by the controller based on the angle signal. Therefore, a position of an antenna can be adjusted with swing of the antenna such that signal sending stability of the antenna can be ensured.

Abstract: An electronic device includes: a foam is located below an OLED display, and a film is located below the foam. Multiple bridge circuits are disposed on the film. Each bridge circuit includes two parallel branches. A first branch includes a first and a third resistor. A second branch includes a second and a fourth resistor. At least one of the four resistors is bonded to the foam. At least one resistor is not bonded to the foam. The resistor that is bonded to the foam is made from a first material. A strain sensitivity coefficient of the first material is greater than 100. A film area in which the resistor that is bonded to the foam is located is covered by a second material. A Young's modulus of the second material is greater than 30.

Abstract: An antenna adjustment system and a base station, where the antenna adjustment system includes an inertial feedback unit configured to detect a swing angle of an antenna when the antenna swings with a housing, and send an angle signal to a controller, an actuator and an elastic element configured to control an auxiliary board to rotate back in a direction opposite to a swing direction of the housing in order to counteract deflection caused by swing of the housing of the antenna fastened to the auxiliary board. The actuator is driven by the controller based on the angle signal. Therefore, a position of an antenna can be adjusted with swing of the antenna such that signal sending stability of the antenna can be ensured.

Abstract: Integrated circuits with improved laterally diffused metal oxide semiconductor (LDMOS) structures, and methods of fabricating the same, are provided. An exemplary LDMOS integrated circuit includes an n-type reduced surface field, a p-type body well disposed on a lateral side of the n-type reduced surface field region, a shallow trench isolation structure disposed within the n-type reduced surface field region, and a gate structure disposed partially over the p-type body well, partially over the n-type reduced surface field region, partially over the shallow trench isolation structure, and partially within the shallow trench isolation structure.

Abstract: Embodiments of the present invention disclose a plug-in mechanism, a subrack including the plug-in mechanism, and a finished board, and relate to a power mechanism, so as to implement fast and reliable plug-in and plug-out by using a lever assistance effect, and a gearing effect of a parallelogram mechanism. The plug-in mechanism provided by an embodiment of the present invention is configured to be disposed between a sub-carrier frame and a parent carrier frame to implement plug-in and plug-out of the sub-carrier frame in the parent carrier frame, and the plug-in mechanism includes a driving part and a gearing part.

Abstract: Integrated circuits with improved laterally diffused metal oxide semiconductor (LDMOS) structures, and methods of fabricating the same, are provided. An exemplary LDMOS integrated circuit includes a p-type semiconductor substrate, an n-type epitaxial layer disposed over and in contact with the p-type semiconductor substrate, and a p-type implant layer disposed within the n-type epitaxial layer, wherein the p-type implant layer is not in contact with the p-type semiconductor substrate. It further includes an n-type reduced surface field region disposed over and in contact with the p-type implant layer, a p-type body well disposed on a lateral side of the p-type implant layer and the n-type reduced surface field region, and a shallow trench isolation (STI) structure disposed within the n-type reduced surface field region. Still further, it includes a gate structure disposed partially over the p-type body well, partially over the n-type surface field region, and partially over the STI structure.

Abstract: A plug-in mechanism, a subrack and a finished board are provided. The plug-in mechanism implements fast and reliable plug-in and plug-out by using a lever assistance effect and a gearing effect of a gear. The plug-in mechanism is configured to be disposed between a sub-carrier frame and a parent carrier frame to implement plug-in and plug-out of the sub-carrier frame in the parent carrier frame, and the plug-in mechanism includes a driving part and a gearing part, where the driving part includes an ejector lever, the gearing part includes at least one gear that is engaged successively, a gear at one end is connected to the ejector lever, each of the at least one gear is fastened onto the sub-carrier frame by using a rotating shaft, and the at least one gear is connected to the parent carrier frame by using a linkage structure.

Abstract: Integrated circuits with improved laterally diffused metal oxide semiconductor (LDMOS) structures, and methods of fabricating the same, are provided. An exemplary LDMOS integrated circuit includes an n-type reduced surface field, a p-type body well disposed on a lateral side of the n-type reduced surface field region, a shallow trench isolation structure disposed within the n-type reduced surface field region, and a gate structure disposed partially over the p-type body well, partially over the n-type reduced surface field region, partially over the shallow trench isolation structure, and partially within the shallow trench isolation structure.

Abstract: Integrated circuits with improved laterally diffused metal oxide semiconductor (LDMOS) structures, and methods of fabricating the same, are provided. An exemplary LDMOS integrated circuit includes a p-type semiconductor substrate, an n-type epitaxial layer disposed over and in contact with the p-type semiconductor substrate, and a p-type implant layer disposed within the n-type epitaxial layer, wherein the p-type implant layer is not in contact with the p-type semiconductor substrate. It further includes an n-type reduced surface field region disposed over and in contact with the p-type implant layer, a p-type body well disposed on a lateral side of the p-type implant layer and the n-type reduced surface field region, and a shallow trench isolation (STI) structure disposed within the n-type reduced surface field region. Still further, it includes a gate structure disposed partially over the p-type body well, partially over the n-type surface field region, and partially over the STI structure.

Abstract: Integrated circuits with improved LDMOS structures are provided. An integrated circuit includes a semiconductor substrate, a plurality of shallow trench isolation (STI) regions, each extending at least a first depth below an upper surface of the semiconductor substrate. The STI regions electrically isolate devices fabricated in the semiconductor substrate. The integrated circuit further includes a transistor structure. The transistor structure includes a gate dielectric positioned over a portion of a first one of the plurality of STI regions, a drain region adjacent to the first one of the plurality of STI regions and spaced apart from the gate dielectric, a first gate electrode that extends over a first portion of the gate dielectric, a second gate electrode that extends over a second portion of the gate dielectric and positioned adjacent to the first gate electrode, and a source region positioned adjacent to the first portion of the gate dielectric.

Abstract: Embodiments of the present invention disclose a plug-in mechanism, a subrack including the plug-in mechanism, and a finished board, and relate to a power mechanism, so as to implement fast and reliable plug-in and plug-out by using a lever assistance effect, and a gearing effect of a parallelogram mechanism. The plug-in mechanism provided by an embodiment of the present invention is configured to be disposed between a sub-carrier frame and a parent carrier frame to implement plug-in and plug-out of the sub-carrier frame in the parent carrier frame, and the plug-in mechanism includes a driving part and a gearing part.

Abstract: A container data center includes one container body and at least one cabinet set that is arranged in the container body in one direction. Each cabinet set includes at least one cabinet, and a direction in which the at least one cabinet is arranged is perpendicular to the direction in which the cabinet set is arranged. Bottoms of all cabinets in each cabinet set are fastened on one shock absorbing platform, and a bottom of the shock absorbing platform is fastened to a bottom of the container body by using multiple shock absorbers. The container data center can reduce an impact of vibration and a shock on a data center pipe in a transportation process.

Abstract: A plug-in mechanism, a subrack and a finished board are provided. The plug-in mechanism implements fast and reliable plug-in and plug-out by using a lever assistance effect and a gearing effect of a gear. The plug-in mechanism is configured to be disposed between a sub-carrier frame and a parent carrier frame to implement plug-in and plug-out of the sub-carrier frame in the parent carrier frame, and the plug-in mechanism includes a driving part and a gearing part, where the driving part includes an ejector lever, the gearing part includes at least one gear that is engaged successively, a gear at one end is connected to the ejector lever, each of the at least one gear is fastened onto the sub-carrier frame by using a rotating shaft, and the at least one gear is connected to the parent carrier frame by using a linkage structure.

Abstract: Integrated circuits with improved LDMOS structures are provided. An integrated circuit includes a semiconductor substrate, a plurality of shallow trench isolation (STI) regions, each extending at least a first depth below an upper surface of the semiconductor substrate. The STI regions electrically isolate devices fabricated in the semiconductor substrate. The integrated circuit further includes a transistor structure. The transistor structure includes a gate dielectric positioned over a portion of a first one of the plurality of STI regions, a drain region adjacent to the first one of the plurality of STI regions and spaced apart from the gate dielectric, a first gate electrode that extends over a first portion of the gate dielectric, a second gate electrode that extends over a second portion of the gate dielectric and positioned adjacent to the first gate electrode, and a source region positioned adjacent to the first portion of the gate dielectric.

Abstract: A container-type data center is provided in embodiments of the present invention, including a container, cabinets, computing devices, and cooling devices. The cabinets are arranged in rows inside the container. The computing devices are set inside the cabinets. Air enters from one side of each of the cabinets and exhausts from another side to form left-to-right air vents. The left-to-right air vents are connected in series. In the series air vents of the cabinets, multiple cooling devices are set. In the container, a maintenance passage is formed for maintaining the cabinets. Maintenance planes of the cabinets face the maintenance passage. In the embodiments of the present invention, the air enters from one side of each of the cabinets and exhausts from the other side to form the left-to-right air vents, and the maintenance planes of the cabinets face the maintenance passage. In this way, the maintenance convenience is greatly improved.