Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

Abstract: A door frame for a vehicle includes an inner frame configured such that a roof part corresponding to a roof of a vehicle body and a pillar part corresponding to a pillar of the vehicle body extend to be integrated with each other. A first outer frame is configured to extend along the roof part of the inner frame and to be coupled to the roof part so that a first glass run is fixed to the first outer frame. A second outer frame is configured to extend along the pillar part and to be coupled to the pillar part so that a second glass run is fixed to the second outer frame. The first glass run and the second glass run are both capable of absorbing impact when the door glass is inserted thereinto.

Abstract: A door frame for a vehicle includes an inner frame configured such that a roof part corresponding to a roof of a vehicle body and a pillar part corresponding to a pillar of the vehicle body extend to be integrated with each other. A first outer frame is configured to extend along the roof part of the inner frame and to be coupled to the roof part so that a first glass run is fixed to the first outer frame. A second outer frame is configured to extend along the pillar part and to be coupled to the pillar part so that a second glass run is fixed to the second outer frame. The first glass run and the second glass run are both capable of absorbing impact when the door glass is inserted thereinto.

Abstract: An over slam bumper assembly includes a reinforcement member mounted on a door panel, and an over slam bumper including a first portion disposed between the door panel and the reinforcement member and a second portion disposed between the door panel and a vehicle body to contact the vehicle body when a door is closed.

Abstract: An over slam bumper assembly includes a reinforcement member mounted on a door panel, and an over slam bumper including a first portion disposed between the door panel and the reinforcement member and a second portion disposed between the door panel and a vehicle body to contact the vehicle body when a door is closed.

Abstract: A supporting structure of a door impact beam for a vehicle mounted on an inner panel of a door for the vehicle, may include a coupling part formed with a coupling groove to which the impact beam may be coupled, a supporting part bent downwardly from the coupling part and supporting the coupling part, and mounting parts provided along side portions of the coupling part and the supporting part and mounted on the inner panel of the door, wherein the coupling part, the supporting part, and the mounting part may be integrally formed, and the coupling part and the supporting part may be protruded from the inner panel of the door to form a reinforcing part.

Abstract: Provided is a nitride semiconductor light emitting diode (LED) including a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-type contact layer formed on the p-type nitride semiconductor layer and doped with more than 1×1020/cm3 of p-type impurities; a transparent oxide electrode formed on the p-type contact layer; a p-electrode formed on the transparent oxide electrode; and an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.

Abstract: A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

Abstract: A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

Abstract: A GaN-based LED comprises a substrate; an an-type GaN layer formed on the substrate; an active layer formed on a predetermined region of the n-type GaN layer; a p-type GaN layer formed on the active layer; a transparent electrode formed on the p-type GaN layer; a p-electrode formed on the transparent electrode; an n-type electrode formed on the n-type GaN layer on which the active layer is not formed; and a protective film formed on a resulting structure between the transparent electrode and the n-type electrode, the protective film being composed of a plasma-oxidized transparent layer.

Abstract: Provided is a nitride semiconductor light emitting diode (LED) including a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-type contact layer formed on the p-type nitride semiconductor layer and doped with more than 1×102/cm3 of p-type impurities; a transparent oxide electrode formed on the p-type contact layer; a p-electrode formed on the transparent oxide electrode; and an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.

Abstract: A structure of an auxiliary tail gate, to open and close a main cargo area when it is impossible to provide enough space to move a main tail gate because another vehicle or obstacle is parked or placed near, and to store small cargo separately from the main cargo area. The auxiliary tail gate is rotatably disposed to the main tail gate by a hinge so as to open and close the main cargo area, an upper trim and a lower trim are attached to an inner panel of the main tail gate, and a trim door, disposed between the upper trim and the lower trim, defines an auxiliary cargo area between the trim door and an inner panel of the auxiliary tail gate, the trim door being detachably engaged with the upper trim and the lower trim.

Abstract: A structure of an auxiliary tail gate, to open and close a main cargo area when it is impossible to provide enough space to move a main tail gate because another vehicle or obstacle is parked or placed near, and to store small cargo separately from the main cargo area. The auxiliary tail gate is rotatably disposed to the main tail gate by a hinge so as to open and close the main cargo area, an upper trim and a lower trim are attached to an inner panel of the main tail gate, and a trim door, disposed between the upper trim and the lower trim, defines an auxiliary cargo area between the trim door and an inner panel of the auxiliary tail gate, the trim door being detachably engaged with the upper trim and the lower trim.

Abstract: The present invention relates to a multi-wavelength laser diode, in which an oscillating structure includes a semiconductor substrate, and a lower cladding layer, an active layer and a ridge formed in their order on the semiconductor substrate. A first metal layer is formed on a first face of the oscillating structure including one end of the ridge, and made of a metal having a high reflectivity in a first wavelength range of at least a predetermined wavelength. A second metal layer is formed on the first metal layer, the second metal layer being made of a metal having a high reflectivity in a second wavelength range under the predetermined wavelength. The multi-wavelength laser diode can improve-the reflective layer structure to achieve a high reflectivity in the entire visible light range.