Abstract: Provided is a semiconductor device. The semiconductor device includes a substrate including an element isolation layer defining a plurality of active areas, and a plurality of gate structures intersecting the active areas. Each of the gate structures includes a gate insulating layer including a first region containing a first material and a second region containing a second material different from the first material on the active area, and a gate electrode layer on the gate insulating layer. A concentration of the second material in the first region is less than a concentration of the second material in the second region, and a thickness of the first region is less than a thickness of the second region.

Abstract: A method for manufacturing an antifogging porous silica thin film includes preparing a silicon block copolymer micelle solution, forming a coating layer by applying the solution on a substrate using a compressed air spraying method, forming a porous silica thin film by subjecting the coating layer to an oxygen plasma treatment, and solvent-annealing the porous silica thin film.