Abstract: The present invention provides a method for moving and transferring nanowires using tapered hair of diameter in micron range. The nanowires have a diameter of 60-150 nm. The tapered hair has a diameter of 1-100 ?m, a tip curvature radius of 0.8-3 ?m and a length of 4-10 mm. A plastic film on a copper grid used for a TEM is removed, the copper grid is reserved, and holes have a diameter of 50-100 ?m. The copper grid after ultrasonic cleaning gains the nanowires from the acetone liquid with ultrasonic dispersed nanowires. The copper grid with distributed nanowires and the tapered hair are respectively placed on mobile platforms of two different optical microscopes. Millimeter movement and micron movement of the tapered hair are realized, thereby realizing movement and transfer operation for the nanowires.

Abstract: A nanometer cutting depth high-speed single-point scratch test device includes a workbench, an air-bearing turntable, a test piece fixture, a test piece, a Z-direction feeding device, a nano positioning stage, a force sensor and a scratch tool. A micro convex structure with controllable length and height is machined in a position of the test piece to be scratched.

Abstract: The present invention provides a self-healing method for fractured SiC amorphous nanowires. A goat hair in a Chinese brush pen of goat hair moves and transfers single crystal nanowires under an optical microscope. On an in-situ nanomechanical test system of a TEM, local single crystal nanowires are irradiated with an electron beam for conducting amorphization transformation. Amorphous length of a single crystal after transformation is 60-100 nm. A fracture strength test is conducted on the amorphous nanowires in the single crystal after transformation in the TEM; and fracture strength of the amorphous nanowires is 9-11 GPa. After the amorphous nanowires are fractured, unloading causes a slight contact between the fractured end surfaces; and self-healing of the nanowires is conducted after waiting for 16-25 min in a vacuum chamber of the TEM. Atom diffusion is found at a healed fracture through in-situ TEM representation; and recrystallization is found in the amorphous nanowires.

Abstract: The present invention discloses a radiator, where the radiator includes a mounting portion used for mounting a heat source, a radiating portion connected with the mounting portion and used for absorbing heat transferred by the mounting portion, the radiating portion is internally provided with multiple radiating pipelines, the radiating pipelines are internally injected with liquid, and the liquid in the radiating pipelines is gasified after absorbing heat on one end where the radiating portion is close to the mounting portion, and in the radiating pipelines, moves from one end where the radiating portion is close to the mounting portion towards one end where the radiating portion is away from the mounting portion. The present invention further discloses a backlight module, and the present invention further discloses a display module. The present invention effectively improves the heat transfer effect, and effectively enhances the radiating effect.

Abstract: The present invention discloses a radiator, where the radiator includes a mounting portion used for mounting a heat source, a radiating portion connected with the mounting portion and used for absorbing heat transferred by the mounting portion, the radiating portion is internally provided with multiple radiating pipelines, the radiating pipelines are internally injected with liquid, and the liquid in the radiating pipelines is gasified after absorbing heat on one end where the radiating portion is close to the mounting portion, and in the radiating pipelines, moves from one end where the radiating portion is close to the mounting portion towards one end where the radiating portion is away from the mounting portion. The present invention further discloses a backlight module, and the present invention further discloses a display module. The present invention effectively improves the heat transfer effect, and effectively enhances the radiating effect.

Abstract: A substrate grinding and polishing device comprising separate grinding and polishing units for operating on a work-piece. The work piece is clamped to a rotating work table under the units and a track underneath the rotating work table allows for quick transfer from the grinding unit to the polishing unit or vice versa. This setup allows for easy transfer as well as quick adjustment between different modes of grinding and polishing.

Abstract: A detection device is described for measuring the vaporization-melt ratio, the device including a light source, a first and second optical lens group, a slit, a first and second steering mirror, a first and second primary mirror, a glass container, a colored blade, and a high-speed recording analyzer. The first primary mirror and the second primary mirror are symmetrically placed at both ends of the glass container. The first optical lens group is located between the light source and the slit. The second optical lens group is located between the colored blade and the high-speed recording analyzer. The first steering mirror is installed behind the slit, passing the light from the slit to the first primary mirror. The light reflected by the second primary mirror is passed to the colored blade from the second steering mirror located between the second primary mirror and the colored blade.

Abstract: The invention, involving grinding and polishing flat processing and thinning processing of hard and brittle materials such as silicon wafer, sapphire substrate and the glass substrate, belongs to ultra-precision machining technical field and provides a multifunction substrate grinding and polishing device and method for the substrate grinding and polishing, which could be used in the grinding and polishing process of flat substrate such as ceramics, metal and composite materials. The grinding and polishing of substrate are processed in three ways: axial plunge grinding and polishing, radial plunge grinding and polishing and back grinding and polishing of wafer with outer rim. Double-spindle structure consisting of grinding spindle unit and polishing spindle unit is used in the substrate grinding and polishing device where both substrate grinding and polishing can be done. The grinding spindle unit and polishing spindle counterweigh mutually via a traction rope.

Abstract: A detection device for measuring the vaporization-melt ratio, the device including a light source, a first and second optical lens group, a slit, a first and second steering minor, a first and second primary minor, a glass containers, an object, a colored blade, and a high-speed recording analyzer. The first and second primary mirror is symmetrically placed at both ends of the glass container. The first optical lens group is located between the light source and the slit. The second optical lens group is located between the colored blade and the high-speed recording analyzer. The first steering mirror is installed behind the slit, passing the light through the slit to the first primary mirror. The light reflected by the second primary mirror is passed to the colored blade through the second steering minor located between the second primary minor and the colored blade.