Patents by Inventor Dongming HUO

Dongming HUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial wafer for light emitting diode, light emitting diode chip and methods for manufacturing the same
    Patent number: 9093596
    Abstract: An epitaxial wafer for a light emitting diode (LED) and a method for manufacturing the same are provided. The method comprises: providing a substrate; forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n-type semiconductor layer, a first light emitting layer, a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer, a first p-type semiconductor layer, and a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate. An LED chip comprising the epitaxial wafer and a method for manufacturing the same are also provided.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: July 28, 2015
    Assignee: BYD Company Limited
    Inventors: Dongming Huo, Hongpo Hu, Chunlin Xie, Wang Zhang
  • EPITAXIAL WAFER FOR LIGHT EMITTING DIODE, LIGHT EMITTING DIODE CHIP AND METHODS FOR MANUFACTURING THE SAME
    Publication number: 20120267641
    Abstract: An epitaxial wafer for a light emitting diode (LED) and a method for manufacturing the same are provided. The method comprises: providing a substrate; forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n-type semiconductor layer, a first light emitting layer, a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer, a first p-type semiconductor layer, and a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate. An LED chip comprising the epitaxial wafer and a method for manufacturing the same are also provided.
    Type: Application
    Filed: June 28, 2012
    Publication date: October 25, 2012
    Inventors: Dongming HUO, Hongpo Hu, Chunlin Xie, Wang Zhang