Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A stent with an improved anti-slip function. The stent includes: a cylindrical stent including a plurality of openings formed by weaving wires, and a plurality of peaks, the cylindrical stent being subjected to heat treatment, wherein the cylindrical stent has a PTFE-first artificial blood vessel layer being in entire contact with an inner surface thereof, and a plurality of PTFE-second artificial blood vessel layers being in partial contact with an outer surface thereof, and the first and second artificial blood vessel layers are heat-fused together to encompass the cylindrical stent, thereby forming a plurality of first sections having a plurality of openings obstructed and a plurality of seconds sections having the plurality of openings remaining unobstructed, wherein the first sections are inserted into a lesion while pressing against the lesion, thereby being caught in the lesion, and the second sections are caught in the lesion meshed with the openings.

Abstract: A stent with an improved anti-slip function. The stent includes: a cylindrical stent including a plurality of openings formed by weaving wires, and a plurality of peaks, the cylindrical stent being subjected to heat treatment, wherein the cylindrical stent has a PTFE-first artificial blood vessel layer being in entire contact with an inner surface thereof, and a plurality of PTFE-second artificial blood vessel layers being in partial contact with an outer surface thereof, and the first and second artificial blood vessel layers are heat-fused together to encompass the cylindrical stent, thereby forming a plurality of first sections having a plurality of openings obstructed and a plurality of seconds sections having the plurality of openings remaining unobstructed, wherein the first sections are inserted into a lesion while pressing against the lesion, thereby being caught in the lesion, and the second sections are caught in the lesion meshed with the openings.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: An electrical conductor includes a substrate; and a conductive layer disposed on the substrate and including a plurality of silver nanowires, wherein the silver nanowires exhibit a main peak assigned to a (111) crystal plane in an X-ray diffraction spectrum thereof, and a 2? full width at half maximum (FWHM) of the main peak after Gaussian fitting is less than about 0.40 degrees.

Abstract: An electrical conductor includes a substrate; and a conductive layer disposed on the substrate and including a plurality of silver nanowires, wherein the silver nanowires exhibit a main peak assigned to a (111) crystal plane in an X-ray diffraction spectrum thereof, and a 2? full width at half maximum (FWHM) of the main peak after Gaussian fitting is less than about 0.40 degrees.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.