Abstract: A cigarette includes a tobacco rod, a front end plug positioned at a front end of the tobacco rod, a filter rod positioned at a rear end of the tobacco rod, and a wrapper surrounding the tobacco rod, the front end plug, and the filter rod and including at least one perforation formed in an area of the wrapper to allow air to flow to the inside of the wrapper.

Abstract: Provided is an aerosol-generating article including a wrapper which is discolored as the aerosol-generating material is heated, the aerosol-generating article including: a tobacco rod; a front-end plug arranged on a side of the tobacco rod; a filter rod arranged on the other side of the tobacco rod; and the wrapper surrounding the tobacco rod, the front-end plug, and the filter rod, wherein the wrapper includes a thermochromic material which is heated and discolored by an aerosol-generating device when the aerosol-generating article is inserted into the aerosol-generating device.

Abstract: An air conditioner for a vehicle including an air-conditioning case divided into a plurality of air passageways by a separation wall. A heating heat exchanger is disposed inside the air-conditioning case and exchanges heat with air to heat the interior of the vehicle. A perforated member is disposed at a downstream side of the heating heat exchanger and has a plurality of perforated holes through which the air passing the heating heat exchanger passes, and a partition wall is disposed between the heating heat exchanger and the perforated member to divide the air passageway of the air-conditioning case into a plurality of air passageways, wherein the partition wall is formed integrally with the perforated member.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A topological quantum framework includes a plurality of one-dimensional nanostructures disposed in different directions and connected to each other, wherein a one-dimensional nanostructure of the plurality of one-dimensional nanostructures includes a first composition including a metal capable of incorporating and deincorporating lithium, and wherein the topological quantum framework is porous.

Abstract: A stent with an improved anti-slip function. The stent includes: a cylindrical stent including a plurality of openings formed by weaving wires, and a plurality of peaks, the cylindrical stent being subjected to heat treatment, wherein the cylindrical stent has a PTFE-first artificial blood vessel layer being in entire contact with an inner surface thereof, and a plurality of PTFE-second artificial blood vessel layers being in partial contact with an outer surface thereof, and the first and second artificial blood vessel layers are heat-fused together to encompass the cylindrical stent, thereby forming a plurality of first sections having a plurality of openings obstructed and a plurality of seconds sections having the plurality of openings remaining unobstructed, wherein the first sections are inserted into a lesion while pressing against the lesion, thereby being caught in the lesion, and the second sections are caught in the lesion meshed with the openings.

Abstract: A stent with an improved anti-slip function. The stent includes: a cylindrical stent including a plurality of openings formed by weaving wires, and a plurality of peaks, the cylindrical stent being subjected to heat treatment, wherein the cylindrical stent has a PTFE-first artificial blood vessel layer being in entire contact with an inner surface thereof, and a plurality of PTFE-second artificial blood vessel layers being in partial contact with an outer surface thereof, and the first and second artificial blood vessel layers are heat-fused together to encompass the cylindrical stent, thereby forming a plurality of first sections having a plurality of openings obstructed and a plurality of seconds sections having the plurality of openings remaining unobstructed, wherein the first sections are inserted into a lesion while pressing against the lesion, thereby being caught in the lesion, and the second sections are caught in the lesion meshed with the openings.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract: A topological quantum framework includes a plurality of one-dimensional nanostructures disposed in different directions and connected to each other, wherein a one-dimensional nanostructure of the plurality of one-dimensional nanostructures includes a first composition including a metal capable of incorporating and deincorporating lithium, and wherein the topological quantum framework is porous.

Abstract: An electrical conductor includes a substrate; and a conductive layer disposed on the substrate and including a plurality of silver nanowires, wherein the silver nanowires exhibit a main peak assigned to a (111) crystal plane in an X-ray diffraction spectrum thereof, and a 2? full width at half maximum (FWHM) of the main peak after Gaussian fitting is less than about 0.40 degrees.

Abstract: A transparent electrode includes a substrate; a first layer disposed on the substrate, the first layer including a graphene mesh structure, the graphene mesh structure including graphene and a plurality of holes; and a second layer disposed on the first layer, wherein the second layer includes a plurality of conductive nanowires.

Abstract: An electrical conductor includes a substrate; and a conductive layer disposed on the substrate and including a plurality of silver nanowires, wherein the silver nanowires exhibit a main peak assigned to a (111) crystal plane in an X-ray diffraction spectrum thereof, and a 2? full width at half maximum (FWHM) of the main peak after Gaussian fitting is less than about 0.40 degrees.

Abstract: A transparent electrode including: a substrate; a first layer disposed on the substrate, the first layer including a graphene mesh structure, the graphene mesh structure including graphene and a plurality of holes; and a second layer disposed on the first layer, wherein the second layer includes a plurality of conductive nanowires.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.