Patents by Inventor Dong Woo Suh
Dong Woo Suh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240083878Abstract: A compound represented by Chemical Formula 1 and an organic light emitting device including the same are provided. The compound is used as a material for an organic material layer of the organic light emitting device, and provides improved efficiency, low driving voltage, and increased lifespan of the organic light emitting device.Type: ApplicationFiled: February 22, 2022Publication date: March 14, 2024Inventors: Min Woo Jung, Dong Hoon Lee, Sang Duk Suh, Jungha Lee, Su Jin Han, Seulchan Park, Sunghyun Hwang
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Patent number: 11468257Abstract: Disclosed are an electronic apparatus for recognizing a multimedia signal and an operating method of the electronic apparatus, including segmenting a detection signal into a plurality of frames; segmenting each of the frames into a plurality of blocks; and representing each of the blocks as a hash word based on a time feature and a frequency feature for each of the blocks.Type: GrantFiled: June 11, 2020Date of Patent: October 11, 2022Assignee: NAVER CORPORATIONInventors: Jisu Jeon, Dong Hwan Kim, Dong Woo Suh, Dae Hwang Kim, Jongeun Park
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Publication number: 20200394383Abstract: Disclosed are an electronic apparatus for recognizing a multimedia signal and an operating method of the electronic apparatus, including segmenting a detection signal into a plurality of frames; segmenting each of the frames into a plurality of blocks; and representing each of the blocks as a hash word based on a time feature and a frequency feature for each of the blocks.Type: ApplicationFiled: June 11, 2020Publication date: December 17, 2020Applicant: NAVER CORPORATIONInventors: Jisu JEON, Dong Hwan KIM, Dong Woo SUH, Dae Hwang KIM, Jongeun PARK
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Patent number: 8188512Abstract: A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.Type: GrantFiled: August 5, 2009Date of Patent: May 29, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Sang Hoon Kim, Gyung Ock Kim, Dong Woo Suh, Ji Ho Joo
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Patent number: 8183633Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.Type: GrantFiled: July 30, 2010Date of Patent: May 22, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: O-Kyun Kwon, Dong-Woo Suh, Jung-Hyung Pyo, Gyung-Ock Kim
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Patent number: 8017420Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.Type: GrantFiled: June 25, 2009Date of Patent: September 13, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: In-Gyoo Kim, Dong-Woo Suh, Gyung-Ock Kim
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Patent number: 7927988Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.Type: GrantFiled: June 21, 2009Date of Patent: April 19, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: In-Gyoo Kim, O-Kyun Kwon, Dong-Woo Suh, Gyung-Ock Kim
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Patent number: 7899285Abstract: A leaky plasmon mode directional coupler and a polarization detection module for a magneto-optical pickup head, which uses the leaky plasmon mode directional coupler, are provided. The leaky plasmon mode directional coupler is manufactured by integrating a planar waveguide and a leaky plasmon mode waveguide, which share a cladding layer with each other, into one body. The polarization detection module includes the leaky plasmon mode directional coupler, a first photo diode, which is formed on the leaky plasmon mode directional coupler, and a second photo diode, which is located at an output port of the planar waveguide.Type: GrantFiled: March 4, 2004Date of Patent: March 1, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Yongwoo Park, Hyeon Bong Pyo, Dong Woo Suh, Yeungjoon Sohn, Hojun Ryu, Mun Cheol Paek
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Publication number: 20100301448Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.Type: ApplicationFiled: July 30, 2010Publication date: December 2, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: O-Kyun KWON, Dong-Woo Suh, Junghyung Pyo, Gyung-Ock Kim
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Publication number: 20100270589Abstract: Provided is a photodetector converting an optical signal into an electrical signal. The photodetector includes: a plurality of semiconductor layers sequentially stacked on a substrate; a plurality of photoelectric conversion units formed in the semiconductor layers, respectively, and having different spectral sensitivities from each other; and buffer layers interposed between the adjacent semiconductor layers, respectively. Each of the buffer layers alleviates stress between the adjacent semiconductor layers.Type: ApplicationFiled: May 8, 2008Publication date: October 28, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: Dong-Woo Suh, Gyung-Ock Kim, Sang-Hun Kim
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Patent number: 7790567Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.Type: GrantFiled: May 30, 2008Date of Patent: September 7, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: O-Kyun Kwon, Dong-Woo Suh, Jung-Hyung Pyo, Gyung-Ock Kim
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Publication number: 20100159674Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.Type: ApplicationFiled: June 21, 2009Publication date: June 24, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: In-Gyoo Kim, O-Kyun Kwon, Dong-Woo Suh, Gyung-Ock Kim
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Publication number: 20100144075Abstract: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.Type: ApplicationFiled: June 25, 2009Publication date: June 10, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: In-Gyoo Kim, Dong-Woo Suh, Gyung-Ock Kim
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Publication number: 20100144124Abstract: Provided is a method of growing a pure germanium (Ge) thin film with low threading dislocation density using reduced pressure chemical vapor deposition (RPCVD), which includes growing a Ge thin film on a silicon (Si) substrate at a low temperature, performing real-time annealing for a short period of time, and growing the annealed Ge thin film at a high temperature. The grown Ge single crystal thin film can overcome conventional problems of generation of a Si—Ge layer due to Si diffusion, and propagation of misfit dislocation to a high-temperature Ge thin film.Type: ApplicationFiled: August 5, 2009Publication date: June 10, 2010Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sang Hoon KIM, Dong Woo Suh, Ji Ho Joo, Gyung Ock Kim, Hyun Tak Kim
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Publication number: 20100133585Abstract: A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.Type: ApplicationFiled: August 5, 2009Publication date: June 3, 2010Applicant: ELECTRONICS AND TELECOMUNICATIONS RESEARCH INSTITUTEInventors: Sang Hoon Kim, Gyung Ock Kim, Dong Woo Suh, Ji Ho Joo
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Patent number: 7580336Abstract: An optical head has a beam input/output coupler on a planar waveguide and other parts including: a light transmitting element emitting a beam; a planar waveguide formed on a substrate and receiving the beam oscillated from the light transmitting element; a beam input/output coupler integrated as a thin film on a portion of the planar waveguide and receiving the beam through the planar waveguide to transmit the beam vertically toward a disc positioned above the planar waveguide or transmitting the beam reflected from the disc through the planar waveguide; and light receiving elements receiving the beam propagated to the planar waveguide through the beam input/output coupler.Type: GrantFiled: November 10, 2005Date of Patent: August 25, 2009Assignee: Electronics and Telecommunications Research InstituteInventors: Dong Woo Suh, Yong Woo Park, Mun Cheol Paek, Ho Jun Ryu, Hee Sook Chung, Kwang Yong Kang
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Publication number: 20090152673Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.Type: ApplicationFiled: May 30, 2008Publication date: June 18, 2009Applicant: Electronics and Telecommunications Research InstituteInventors: O-Kyun KWON, Dong-Woo SUH, Junghyung PYO, Gyung-Ock KIM
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Patent number: 7399420Abstract: Provided are a stamper fabricated by using an embossing master and a focusing grating coupler fabricated by using the stamper, which is applicable to a subminiature pickup head for a mobile optic disk, whereby it is possible to reduce a weight and a volume of the pickup head with a simple process and low cost and to apply for mass production.Type: GrantFiled: March 19, 2004Date of Patent: July 15, 2008Assignee: Electronics and Telecommunications Research InstituteInventors: Mun Cheol Paek, Dong Woo Suh, Ho Jun Ryu, Hyeon Bong Pyo, Yong Woo Park
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Patent number: 7283705Abstract: Provided is a planar focusing grating coupler, comprising: a light waveguide including a cladding layer and a core layer formed on a substrate and maintaining incident laser light in a single mode; and a focusing grating coupler formed to have a predetermined grating pitch at a certain area over the core layer, wherein the light using to the light waveguide forms a focal point with the grating layer in the direction perpendicular to the focusing grating coupler, whereby an ultra small pickup head for a mobile optical disk can be used.Type: GrantFiled: August 9, 2004Date of Patent: October 16, 2007Assignee: Electronics and Telecommunications Research InstituteInventors: Mun Cheol Paek, Yeung Joon Sohn, Dong Woo Suh, Ho Jun Ryu, Hyeon Bong Pyo, Yong Woo Park
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Recording layer of magneto-optical storage medium having sublayer and method of fabricating the same
Patent number: 7153540Abstract: A recording layer of a magneto-optical storage medium having a sublayer in accordance with the present invention comprises a recording layer on which information is recorded and stored; and a sublayer formed above or below the recording layer and made up of an alloy containing a transition metal, wherein a magnetic anisotropy energy of the sublayer is exchange-coupled to the recording layer, thereby enhancing a coercive force of the recording layer. The sublayer may be formed in a single-layered structure having one layer, or in a multi-layered structure having a plurality of layers. The sublayer is preferably made up of an alloy containing a transition metal used for the recording layer. According to the present invention, the coercive force of the recording layer can be increased by an exchange coupling effect between the recording layer and its adjacent sublayer, and thus, the stability of the magnetic domain in the recording layer can be improved.Type: GrantFiled: November 24, 2003Date of Patent: December 26, 2006Assignee: Electronics and Telecommunications Research InstitiuteInventors: Dong Woo Suh, Ho Jun Ryu, Yeung Joon Sohn, Yong Woo Park, Mun Cheol Paek