Patents by Inventor Dongwun SHIN

Dongwun SHIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon layer etchant composition and method of forming pattern by using the same
    Patent number: 11168253
    Abstract: A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: November 9, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., DONGWOO FINE-CHEM CO., LTD.
    Inventors: Changsu Jeon, Jungmin Oh, Hyosan Lee, Hoon Han, Jinkyu Roh, Hyojoong Yoon, Dongwun Shin
  • SILICON LAYER ETCHANT COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME
    Publication number: 20200216757
    Abstract: A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.
    Type: Application
    Filed: January 6, 2020
    Publication date: July 9, 2020
    Applicant: Dongwoo Fine-Chem Co., Ltd.
    Inventors: Changsu JEON, Jungmin OH, Hyosan LEE, Hoon HAN, Jinkyu ROH, Hyojoong YOON, Dongwun SHIN