Patents by Inventor Dongxia Liu

Dongxia Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150157982
    Abstract: Exhaust gas catalysts are disclosed. One exhaust gas catalyst comprises a noble metal and a molecular sieve, and has an infrared spectrum having a characteristic absorption peak from 750 cm?1 to 1050 cm?1 in addition to the absorption peaks for the molecular sieve itself. The exhaust gas catalyst also comprises a noble metal and a molecular sieve, having greater than 5 percent of the noble metal amount located inside pores of the molecular sieve. The exhaust gas catalyst also comprises a first and second molecular sieve catalyst. The first molecular sieve catalyst comprises a first noble metal and a first molecular sieve, and the second molecular sieve catalyst comprises a second noble metal and a second molecular sieve. The first and second molecular sieves are different. The invention also includes exhaust systems comprising the exhaust gas catalysts, and a method for treating exhaust gas utilizing the exhaust gas catalysts.
    Type: Application
    Filed: December 8, 2014
    Publication date: June 11, 2015
    Inventors: Raj Rao RAJARAM, Fiona-Mairead MCKENNA, Hai-Ying CHEN, Dongxia LIU
  • Patent number: 8129072
    Abstract: A c-axis-oriented HAP thin film synthesized by seeded growth on a palladium hydrogen membrane substrate. An exemplary synthetic process includes electrochemical seeding on the substrate, and secondary and tertiary hydrothermal treatments under conditions that favor growth along c-axes and a-axes in sequence. By adjusting corresponding synthetic conditions, an HAP this film can be grown to a controllable thickness with a dense coverage on the underlying substrate. The thin films have relatively high proton conductivity under hydrogen atmosphere and high temperature conditions. The c-axis oriented films may be integrated into fuel cells for application in the intermediate temperature range of 200-600° C. The electrochemical-hydrothermal deposition technique may be applied to create other oriented crystal materials having optimized properties, useful for separations and catalysis as well as electronic and electrochemical applications, electrochemical membrane reactors, and in chemical sensors.
    Type: Grant
    Filed: April 11, 2011
    Date of Patent: March 6, 2012
    Assignee: University of Rochester
    Inventors: Matthew Yates, Dongxia Liu
  • Publication number: 20110192727
    Abstract: A c-axis-oriented HAP thin film synthesized by seeded growth on a palladium hydrogen membrane substrate. An exemplary synthetic process includes electrochemical seeding on the substrate, and secondary and tertiary hydrothermal treatments under conditions that favor growth along c-axes and a-axes in sequence. By adjusting corresponding synthetic conditions, an HAP this film can be grown to a controllable thickness with a dense coverage on the underlying substrate. The thin films have relatively high proton conductivity under hydrogen atmosphere and high temperature conditions. The c-axis oriented films may be integrated into fuel cells for application in the intermediate temperature range of 200-600° C. The electrochemical-hydrothermal deposition technique may be applied to create other oriented crystal materials having optimized properties, useful for separations and catalysis as well as electronic and electrochemical applications, electrochemical membrane reactors, and in chemical sensors.
    Type: Application
    Filed: April 11, 2011
    Publication date: August 11, 2011
    Applicant: UNIVERSITY OF ROCHESTER
    Inventors: Matthew Yates, Dongxia Liu
  • Patent number: 7943269
    Abstract: A c-axis-oriented HAP thin film synthesized by seeded growth on a palladium hydrogen membrane substrate. An exemplary synthetic process includes electrochemical seeding on the substrate, and secondary and tertiary hydrothermal treatments under conditions that favor growth along c-axes and a-axes in sequence. By adjusting corresponding synthetic conditions, an HAP this film can be grown to a controllable thickness with a dense coverage on the underlying substrate. The thin films have relatively high proton conductivity under hydrogen atmosphere and high temperature conditions. The c-axis oriented films may be integrated into fuel cells for application in the intermediate temperature range of 200-600° C. The electrochemical-hydrothermal deposition technique may be applied to create other oriented crystal materials having optimized properties, useful for separations and catalysis as well as electronic and electrochemical applications, electrochemical membrane reactors, and in chemical sensors.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: May 17, 2011
    Assignee: University of Rochester
    Inventors: Matthew Yates, Dongxia Liu
  • Publication number: 20110066648
    Abstract: Simultaneous reservation of brand identity is disclosed. In one embodiment a method to simultaneous reserve online brand identity includes initiating a simultaneous search responsive to a single criteria, creating a uniform search result of available internet property such as trademark names, domain names, and/or social media names, searching availability of the internet property related to single search criteria, retaining ownership of matching internet property, registering the internet property, presenting opportunity to users to challenge ownership of the internet property. In another embodiment, a method may include abandoned trademarks responsive to a single search criteria are automatically registered and semantic analysis is performed on search results from the single search criteria.
    Type: Application
    Filed: September 14, 2010
    Publication date: March 17, 2011
    Inventors: Raj Vasant Abhyanker, Dongxia Liu
  • Publication number: 20100015494
    Abstract: A c-axis-oriented HAP thin film synthesized by seeded growth on a palladium hydrogen membrane substrate. An exemplary synthetic process includes electrochemical seeding on the substrate, and secondary and tertiary hydrothermal treatments under conditions that favor growth along c-axes and a-axes in sequence. By adjusting corresponding synthetic conditions, an HAP this film can be grown to a controllable thickness with a dense coverage on the underlying substrate. The thin films have relatively high proton conductivity under hydrogen atmosphere and high temperature conditions. The c-axis oriented films may be integrated into fuel cells for application in the intermediate temperature range of 200-600° C. The electrochemical-hydrothermal deposition technique may be applied to create other oriented crystal materials having optimized properties, useful for separations and catalysis as well as electronic and electrochemical applications, electrochemical membrane reactors, and in chemical sensors.
    Type: Application
    Filed: February 25, 2009
    Publication date: January 21, 2010
    Applicant: University of Rochester
    Inventors: Matthew Yates, Dongxia Liu