Abstract: According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.

Abstract: According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.

Abstract: According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.

Abstract: According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.

Abstract: The present invention relates to a rotationally asymmetric chaotic optical multi-pass cavity useful in optical gas sensing spectroscopy, optical delay lines, and laser amplification systems, for example. The cavity may include a single closed mirror having a light reflective surface that is deformed in two orthogonal directions and more particularly, but not exclusively, in the shape of a quadrupole in both horizontal and vertical planes. The cavity includes a light entry port and a light exit port which may be the same or separate ports, as well as a gas inlet and a gas outlet. The optical path length, the beam divergence rate, and the spot pattern are controlled by selecting the cavity deformation coefficients and the input beam direction to achieve the desired beam path and beam quality.

Abstract: The present invention relates to a rotationally asymmetric chaotic optical multi-pass cavity useful in optical gas sensing spectroscopy, optical delay lines, and laser amplification systems, for example. The cavity may include a single closed mirror having a light reflective surface that is deformed in two orthogonal directions and more particularly, but not exclusively, in the shape of a quadrupole in both horizontal and vertical planes. The cavity includes a light entry port and a light exit port which may be the same or separate ports, as well as a gas inlet and a gas outlet. The optical path length, the beam divergence rate, and the spot pattern are controlled by selecting the cavity deformation coefficients and the input beam direction to achieve the desired beam path and beam quality.