Patents by Inventor Dongxia SHI

Dongxia SHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LAYER-BY-LAYER VAN DER WAALS EPITAXIAL GROWTH OF WAFER-SCALE MOS2 CONTINUOUS FILMS
    Publication number: 20240167195
    Abstract: A MoS2 continuous film on substrate, characterized in that, the domain size of the MoS2 continuous film is larger than 100 ?m (layer number=1), 10 ?m (layer number?2), respectively. High-quality MoS2 films of the present invention with different layer numbers (layer number?2) on a substrate. The films can be continuous over large area (e.g., 4 in. wafer-scale). The films can be made based on chemical vapor deposition method. The films can be used in electrical and electronic devices (e.g., high performance thin-film transistors, logic devices, sensors).
    Type: Application
    Filed: March 19, 2021
    Publication date: May 23, 2024
    Inventors: Qinqin WANG, Guangyu ZHANG, Rong YANG, Dongxia SHI, Gang SUN