Patents by Inventor Dongxia Zhou

Dongxia Zhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Programming mode for multi-layer storage flash memory array and switching control method thereof
    Patent number: 9542311
    Abstract: The present invention relates to a programming mode for improving the reliability of a multi-layer storage flash memory device in a semiconductor storage field. The present invention provides several programming modes for improving the reliability of a multi-layer storage flash memory device and switching control methods thereof, based on the technical conception of skipping some specific logic pages in the programming process to reduce the impact of the floating gate coupling effect on the operation of the flash memory. By skipping some logic pages, the present invention effectively reduces the floating gate coupling effect in the horizontal, diagonal and vertical directions of the multi-layer storage flash memory in the programming process. Therefore, the error rate is reduced, the service life of the device is prolonged, and the reliability of the whole system is enhanced.
    Type: Grant
    Filed: March 23, 2012
    Date of Patent: January 10, 2017
    Assignee: MEMORIGHT (WUHAN) CO., LTD.
    Inventors: Wenjie Huo, Jipeng Xing, Dongxia Zhou
  • PROGRAMMING MODE FOR MULTI-LAYER STORAGE FLASH MEMORY ARRAY AND SWITCHING CONTROL METHOD THEREOF
    Publication number: 20140108712
    Abstract: The present invention relates to a programming mode for improving the reliability of a multi-layer storage flash memory device in a semiconductor storage field. The present invention provides several programming modes for improving the reliability of a multi-layer storage flash memory device and switching control methods thereof, based on the technical conception of skipping some specific logic pages in the programming process to reduce the impact of the floating gate coupling effect on the operation of the flash memory. By skipping some logic pages, the present invention effectively reduces the floating gate coupling effect in the horizontal, diagonal and vertical directions of the multi-layer storage flash memory in the programming process. Therefore, the error rate is reduced, the service life of the device is prolonged, and the reliability of the whole system is enhanced.
    Type: Application
    Filed: March 23, 2012
    Publication date: April 17, 2014
    Applicant: MEMORIGHT (WUHAN) CO., LTD.
    Inventors: Wenjie Huo, Jipeng Xing, Dongxia Zhou