Abstract: A partition design and molding method for an acetabular cup prosthesis with a porous surface includes the following: modeling of a spherical shell of an acetabular cup; cutting of the spherical shell of the acetabular cup into equal parts; integrated design on a porous layer of a surface of the partitioned acetabular cup prosthesis; reorganization of the partitioned acetabular cup prosthesis; construction of a hemispherical acetabular cup prosthesis; and 3D printing and manufacturing of the acetabular cup prosthesis. Through the disclosure, the formed porous layer is perpendicular to the surface of the acetabular cup, so favorable mechanical properties are provided. A fully interconnected branch-rod structure is provided, and there is no isolated rod, so that inflammation or even re-revision led by the detachment of isolated rods during long-term postoperative activities is prevented.

Abstract: A partition design and molding method for an acetabular cup prosthesis with a porous surface includes the following: modeling of a spherical shell of an acetabular cup; cutting of the spherical shell of the acetabular cup into equal parts; integrated design on a porous layer of a surface of the partitioned acetabular cup prosthesis; reorganization of the partitioned acetabular cup prosthesis; construction of a hemispherical acetabular cup prosthesis; and 3D printing and manufacturing of the acetabular cup prosthesis. Through the disclosure, the formed porous layer is perpendicular to the surface of the acetabular cup, so favorable mechanical properties are provided. A fully interconnected branch-rod structure is provided, and there is no isolated rod, so that inflammation or even re-revision led by the detachment of isolated rods during long-term postoperative activities is prevented.

Abstract: A Super304H steel welding wire capable of resisting high-temperature creep and aging embrittlement, includes the following chemical components in percentage by mass: 0.04-0.1% of C, 0.4-1.5% of Mn, 7.5-12.5% of Ni, ?0.5% of Si, 17.0-19.0% of Cr, ?0.4% of Mo, 2.5-3.5% of Cu, 0.3-0.6% of Nb, 0.05-0.12% of N, ?0.01% of S, ?0.02% of P and the balance of Fe and other inevitable impurity elements. The welding wire can be used for welding of Super304H steel used in ultra super critical thermal power stations, has a weld being in a double-phase structure of austenite and a small amount of ferrite (volume fraction is 3-12%), and has good hot cracking resistance capability.

Abstract: The disclosure provides a Super304H steel welding wire capable of resisting high-temperature creep and aging embrittlement, which comprises the following chemical components in percentage by mass: 0.04-0.1% of C, 0.4-1.5% of Mn, 7.5-12.5% of Ni, ?0.5% of Si, 17.0-19.0% of Cr, ?0.4% of Mo, 2.5-3.5% of Cu, 0.3-0.6% of Nb, 0.05-0.12% of N, ?0.01% of S, ?0.02% of P and the balance of Fe and other inevitable impurity elements. The Welding wire can be used for welding of Super304H steel used in ultra super critical thermal power stations, has a weld being in a double-phase structure of austenite and a small amount of ferrite (volume fraction is 3-12%), and has good hot cracking resistance capability.

Abstract: According to one embodiment, an RF frontend IC device includes a first RF transceiver to transmit and receive RF signals within a first predetermined frequency band and a second RF transceiver to transmit and receive RF signals within a second predetermined frequency band. The RF frontend IC device further includes a frequency synthesizer coupled to the first and second RF transceivers to perform frequency synthetization in a wide frequency spectrum, including the first and second frequency bands. The frequency synthesizer generates a first LO signal and a second LO signal for the first RF transceiver and the second RF transceiver to enable the first RF transceiver and the second RF transceiver to transmit and receive RF signals within the first frequency band the second frequency band respectively. The first RF transceiver, the second RF transceiver, and the frequency synthesizer are integrated within a single IC chip.

Abstract: According to one embodiment, an RF frontend IC device includes a first RF transceiver to transmit and receive RF signals within a first predetermined frequency band and a second RF transceiver to transmit and receive RF signals within a second predetermined frequency band. The RF frontend IC device further includes a frequency synthesizer coupled to the first and second RF transceivers to perform frequency synthetization in a wide frequency spectrum, including the first and second frequency bands. The frequency synthesizer generates a first LO signal and a second LO signal for the first RF transceiver and the second RF transceiver to enable the first RF transceiver and the second RF transceiver to transmit and receive RF signals within the first frequency band the second frequency band respectively. The first RF transceiver, the second RF transceiver, and the frequency synthesizer are integrated within a single IC chip.

Abstract: According to one embodiment, an RF frontend IC device includes a first RF transceiver to transmit and receive RF signals within a first predetermined frequency band and a second RF transceiver to transmit and receive RF signals within a second predetermined frequency band. The RF frontend IC device further includes a full-band frequency synthesizer coupled to the first and second RF transceivers to perform frequency synthetization in a wide frequency spectrum, including the first and second frequency bands. The full-band frequency synthesizer generates a first LO signal and a second LO signal for the first RF transceiver and the second RF transceiver to enable the first RF transceiver and the second RF transceiver to transmit and receive RF signals within the first frequency band the second frequency band respectively. The first RF transceiver, the second RF transceiver, and the full-band frequency synthesizer are integrated within a single IC chip.

Abstract: A technique for reconstructing an electron-beam (EB) image, which can be a scanning-electron-microscope (SEM) image or an EB-inspection image, is described. This reconstruction technique may involve an inverse electro-optical calculation that corrects for the influence of an electro-optical transfer function associated with an EB system on the EB image. In particular, in the inverse calculation a multi-valued representation of an initial EB image is at an image plane in the model of the electro-optical transfer function and a resulting EB image is at an object plane in the model of the electro-optical transfer function. Furthermore, the model of the electro-optical transfer function may have an analytical derivative and/or may be represented by a closed-form expression.

Abstract: A technique for reconstructing an electron-beam (EB) image, which can be a scanning-electron-microscope (SEM) image or an EB-inspection image, is described. This reconstruction technique may involve an inverse electro-optical calculation that corrects for the influence of an electro-optical transfer function associated with an EB system on the EB image. In particular, in the inverse calculation a multi-valued representation of an initial EB image is at an image plane in the model of the electro-optical transfer function and a resulting EB image is at an object plane in the model of the electro-optical transfer function. Furthermore, the model of the electro-optical transfer function may have an analytical derivative and/or may be represented by a closed-form expression.