Abstract: A nitride underlayer includes: a pattern substrate with lattice planes of different growth rates; a nitride nucleating layer over the pattern substrate; a first nitride layer with three-dimensional growth over the nitride nucleating layer, and forming a nanopillar structure at a top of the substrate; a second nitride layer with two-dimensional growth over the first nitride layer, and folding into an uncracked plane over the nanopillar structure.

Abstract: An example fluorophore according to the present application includes a carrier, at least one fluorescent entity, and an amphiphilic linker linking each of the at last one fluorescent entities to the carrier. The linker has a linker length that corresponds to its molecular weight, and the molecular weight is greater than 1000 Da.

Abstract: A light emitting diode has a light emitting region including a multiple quantum well structure, including a first protection layer, a first intermediate layer over the first protection layer, a quantum barrier layer over the first intermediate layer, a second intermediate layer over the well layer, a second protection layer over the second intermediate layer, and a quantum barrier layer over the second protection layer.

Abstract: A light-emitting diode includes a first-type nitride region, a light-emitting region and a second-type nitride region, wherein the first-type nitride region includes a plurality of alternating first nitride layers and second nitride layers. The second nitride layers have high-doped emitting points pointing to the corresponding first nitride layer. The second-type nitride region includes a plurality of alternating third nitride layers and fourth nitride layers, wherein doping concentration of the fourth nitride layer is higher than that of the third nitride layer, and the fourth nitride layer has high-doped emitting points pointing to the third nitride layer.

Abstract: A nitride light-emitting diode includes a substrate, an n-type nitride layer, a light-emitting layer, a p-type nitride layer, a p+ layer, an AlInN layer, an n+ layer, and an ITO transparent electrode. A tunneling structure with an AlInN intermediate layer is adopted as the contact layer, which generates polarization charges at the tunneling junction interface and maintains effective width of the depletion region, thereby increasing tunneling probability of holes and reducing contact resistances.

Abstract: A nitride layer with embedded hole structure can be used for fabricating GaN-based LED of high external quantum efficiency through epitaxial growth. The approaches can have advantages such as reducing the complexity chip process for forming hole structure, reducing impacts from the chip process on chip reliability, effective reduction of hole structure size and increase of device stability, crush resistance, and reliability. A fabrication method of an underlayer structure with embedded micro-hole structure is also provided.

Abstract: A light emitting diode has a light emitting region including a multiple quantum well structure, including a first protection layer, a first intermediate layer over the first protection layer, a quantum barrier layer over the first intermediate layer, a second intermediate layer over the well layer, a second protection layer over the second intermediate layer, and a quantum barrier layer over the second protection layer.

Abstract: A nitride light-emitting diode includes a substrate, an n-type nitride layer, a light-emitting layer, a p-type nitride layer, a p+ layer, an AlInN layer, an n+ layer, and an ITO transparent electrode. A tunneling structure with an AlInN intermediate layer is adopted as the contact layer, which generates polarization charges at the tunneling junction interface and maintains effective width of the depletion region, thereby increasing tunneling probability of holes and reducing contact resistances.

Abstract: The present invention discloses a controlling method and the system for smart home, each home appliance records a user's plurality of times of operations, and each sensor module in home appliance collects information on multiple times of working modes of each appliance, sends to the router wirelessly; the router analyzes busiest working periods and according working modes of each appliance, based on multiple times' working modes of each appliance and according working periods; router transmits control signals wirelessly to radio module installed in each appliance, to control each corresponding appliance run automatically in the working mode corresponding to the busiest working periods; the said controlling method and system operates simply, controls automatically without any manual operations, close to users' usage habits, and more humanized, it has freed a user's hands, avoided relying too much on mobile terminals, brought a great convenience to users.

Abstract: This disclosure provides boron nitride nanosheets, and methods of making and using the same. The boron nitride nanosheets may be made by heating solid boron, magnesium oxide and iron oxide compounds in a furnace in the presence of ammonia gas and a substrate, such that the boron nitride nanosheet is deposited on the substrate, where the boron nitride nanosheet comprises a first end, a second end, and a sheet between the first and second ends, where the first end is engaged with the substrate and the sheet extends upward away from the substrate and then curls back towards the substrate so that the second end is oriented towards the substrate.

Abstract: A nitride layer with embedded hole structure can be used for fabricating GaN-based LED of high external quantum efficiency through epitaxial growth. The approaches can have advantages such as reducing the complexity chip process for forming hole structure, reducing impacts from the chip process on chip reliability, effective reduction of hole structure size and increase of device stability, crush resistance, and reliability. A fabrication method of an underlayer structure with embedded micro-hole structure is also provided.

Abstract: This invention discloses a system and method for managing baseboard management controller. The system comprising: at least one BMC; at least one primary node board, connecting to said at least one BMC via a bus; wherein, said bus is a differential bus, and said at least one BMC and said at least one primary node board connecting to said differential bus in bus topology respectively.