Abstract: Provided herein is a method including forming a MEMS cap. A cavity is formed in the MEMS cap wafer, and a bond material is deposited on the MEMS cap wafer, wherein the bond material lines the cavity after the depositing. The MEMS cap wafer is bonded to a MEMS device wafer, wherein the bond material forms a bond between the MEMS cap wafer and the MEMS device wafer. A MEMS device is formed in the MEMS device wafer. The bond material is removed from the cavity.

Abstract: Apparatus, system, and method of depositing thin and ultra-thin parylene are described. In an example, a core deposition chamber is used. The core deposition chamber includes a base and a rigid, removable cover configured to mate and seal with the base to create the core deposition chamber and to define an inside and an outside of the core deposition chamber. The core deposition chamber also includes a conduit through a top of the cover. The conduit has a lumen connecting the inside to the outside of the core deposition chamber. The lumen has a length and a cross-section. The cross-section has a width between 50 ?m and 6000 ?m. The length is less than 140 times the cross-section width. The core deposition chamber can be placed in an outer deposition chamber and can achieve parylene deposition less than 1 ?m thick inside the core deposition chamber.

Abstract: A device comprising a micro-electro-mechanical system (MEMS) substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor (CMOS) substrate is presented herein. The MEMS substrate comprises defined protrusions of respective distinct heights from a surface of the MEMS substrate, and the MEMS substrate is bonded to the CMOS substrate. In an aspect, the defined protrusions can be formed from the MEMS substrate. In another aspect, the defined protrusions can be deposited on, or attached to, the MEMS substrate. In yet another aspect, the MEMS substrate comprises monocrystalline silicon and/or polysilicon. In yet even another aspect, the defined protrusions comprise respective electrodes of sensors of the device.

Abstract: A method includes forming a first mask on a first portion of a first surface of a substrate, forming a second mask on the first mask and further forming the second mask on a second portion of the first surface of the substrate, and etching an exposed portion of the first surface of the substrate and removing the second mask. According to some embodiments, an exposed portion of the first surface of the substrate is etched and the first mask is removed. An oxide layer is formed on the first surface of the substrate. A third mask is formed on the oxide layer except for a portion of the oxide layer corresponding to bumpstop features. The portion of the oxide layer corresponding to the bumpstop features is removed. An exposed portion of the first surface of the substrate is etched and the third mask is removed.

Abstract: A method includes forming a first mask on a first portion of a first surface of a substrate, forming a second mask on the first mask and further forming the second mask on a second portion of the first surface of the substrate, and etching an exposed portion of the first surface of the substrate and removing the second mask. According to some embodiments, an exposed portion of the first surface of the substrate is etched and the first mask is removed. An oxide layer is formed on the first surface of the substrate. A third mask is formed on the oxide layer except for a portion of the oxide layer corresponding to bumpstop features. The portion of the oxide layer corresponding to the bumpstop features is removed. An exposed portion of the first surface of the substrate is etched and the third mask is removed.

Abstract: A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.

Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.

Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.

Abstract: Provided herein is a method including forming a MEMS cap. A cavity is formed in the MEMS cap wafer, and a bond material is deposited on the MEMS cap wafer, wherein the bond material lines the cavity after the depositing. The MEMS cap wafer is bonded to a MEMS device wafer, wherein the bond material forms a bond between the MEMS cap wafer and the MEMS device wafer. A MEMS device is formed in the MEMS device wafer. The bond material is removed from the cavity.

Abstract: A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.

Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.

Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.

Abstract: A device comprising a micro-electro-mechanical system (MEMS) substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor (CMOS) substrate is presented herein. The MEMS substrate comprises defined protrusions of respective distinct heights from a surface of the MEMS substrate, and the MEMS substrate is bonded to the CMOS substrate. In an aspect, the defined protrusions can be formed from the MEMS substrate. In another aspect, the defined protrusions can be deposited on, or attached to, the MEMS substrate. In yet another aspect, the MEMS substrate comprises monocrystalline silicon and/or polysilicon. In yet even another aspect, the defined protrusions comprise respective electrodes of sensors of the device.

Abstract: A composition of matter is described in which a porous material, such as polydimethylsiloxane (PDMS), is coated with parylene N, C, D, or AF-4 by vapor deposition polymerization while a temperature of the porous material's surface being coated is heated to between 60° C. and 120° C., or 80° C. and 85° C., during deposition. The parylene forms nano roots within the porous material that connect with a conformal surface coating of parylene. In some embodiments, a watertight separation chamber in an integrated microfluidic liquid chromatography device is fabricated by heating tunnels in micro-fabricated PDMS and depositing parylene within the heated tunnels.

Abstract: An implantable medical device, a method of manufacturing, and a method of use are described. The implantable medical device includes an absorption bag connected by a cannula to a discharge bag. The implantable medical device also includes a reservoir external to the discharge bag and attached to a surface of the discharge bag. At least a portion of the absorption bag and at least a portion of a bottom surface of the reservoir are permeable to a predefined class of small molecules, such as molecular oxygen. The reservoir can retain live cells that rely on the small molecules for survival and growth. Based on concentration of the small molecules, the small molecules permeate into the absorption bag and are transported to the discharge bag for permeation into the reservoir, thereby providing a supply of the small molecules to the live cells.

Abstract: A medical device having a permeable bag connected by a non-permeable cannula to a discharge sac is described along with a manufacturing process and surgical implantation method. The permeable portions of the device have pores that are sized to be permeable to a predetermined class of small molecules, such as oxygen, nitrous oxide, or other therapeutic agents. Once absorbed inside the device, the small molecules are then passively transported, by a concentration gradient of the small molecules, to the discharge sac to be disbursed. A metal tube or other strip can be included in the cannula to assist a surgeon in orienting the device within the body.

Abstract: Apparatus, system, and method of depositing thin and ultra-thin parylene are described. In an example, a core deposition chamber is used. The core deposition chamber includes a base and a rigid, removable cover configured to mate and seal with the base to create the core deposition chamber and to define an inside and an outside of the core deposition chamber. The core deposition chamber also includes a conduit through a top of the cover. The conduit has a lumen connecting the inside to the outside of the core deposition chamber. The lumen has a length and a cross-section. The cross-section has a width between 50 ?m and 6000 ?m. The length is less than 140 times the cross-section width. The core deposition chamber can be placed in an outer deposition chamber and can achieve parylene deposition less than 1 ?m thick inside the core deposition chamber.

Abstract: An implantable medical device, a method of manufacturing, and a method of use are described. The implantable medical device includes an absorption bag connected by a cannula to a discharge bag. The implantable medical device also includes a reservoir external to the discharge bag and attached to a surface of the discharge bag. At least a portion of the absorption bag and at least a portion of a bottom surface of the reservoir are permeable to a predefined class of small molecules, such as molecular oxygen. The reservoir can retain live cells that rely on the small molecules for survival and growth. Based on concentration of the small molecules, the small molecules permeate into the absorption bag and are transported to the discharge bag for permeation into the reservoir, thereby providing a supply of the small molecules to the live cells.

Abstract: A composition of matter is described in which a porous material, such as polydimethylsiloxane (PDMS), is coated with parylene N, C, D, or AF-4 by vapor deposition polymerization while a temperature of the porous material's surface being coated is heated to between 60° C. and 120° C., or 80° C. and 85° C., during deposition. The parylene forms nano roots within the porous material that connect with a conformal surface coating of parylene. In some embodiments, a watertight separation chamber in an integrated microfluidic liquid chromatography device is fabricated by heating tunnels in micro-fabricated PDMS and depositing parylene within the heated tunnels.

Abstract: Coating porous material, such as PDMS, with parylene N, C, D, and AF-4 by vapor deposition polymerization is described in which a temperature of the porous material's surface being coated is heated to between 60° C. and 120° C., or 80° C. and 85° C., during deposition. The parylene forms nano roots within the porous material that connect with a conformal surface coating of parylene. In some embodiments, a watertight separation chamber in an integrated microfluidic liquid chromatography device is fabricated by heating tunnels in micro-fabricated PDMS and depositing parylene within the heated tunnels.