Abstract: The invention provides a multi-Vt vertical power device and a method of making the same. Through patterning a contact mask, a contact structure array having a shared trench gate structure may be formed, and different traversal gaps between an edge of a contact portion of a second conductivity type and an edge of a trench may be formed in the contact structure array. As such, multi-Vt vertical states may be implemented for storing information. The present invention allows making a multi-Vt vertical power device having different Vt's to be capable to store information without additional process steps. Therefore, with respect to the present invention, the process is simple, cost is low, and application field is wide; number of Vt varies to store multi-bit digital information or analog information in the power device; the built-in multi-Vt power MOSFET and IGBT are adapted not only for the high power applications but also for information storage.

Abstract: The invention provides a multi-Vt vertical power device and a method of making the same. Through patterning a contact mask, a contact structure array having a shared trench gate structure may be formed, and different traversal gaps between an edge of a contact portion of a second conductivity type and an edge of a trench may be formed in the contact structure array. As such, multi-Vt vertical states may be implemented for storing information. The present invention allows making a multi-Vt vertical power device having different Vt's to be capable to store information without additional process steps. Therefore, with respect to the present invention, the process is simple, cost is low, and application field is wide; number of Vt varies to store multi-bit digital information or analog information in the power device; the built-in multi-Vt power MOSFET and IGBT are adapted not only for the high power applications but also for information storage.

Abstract: This invention provides a multi-Vt vertical power device and a method of making the same. Through a contact mask, a contact structure array having a shared trench gate structure may be formed, the same traversal gaps between an edge of a contact portion of a second conductivity type of the same set and an edge of a trench may be formed in the contact structure array, and different traversal gaps between an edge of the contact portion of the second conductivity type of different sets and an edge of the trench may be formed in the contact structure array. As such, multi-Vt states may be implemented for storing digital information. The present invention allows making a multi-Vt vertical power device having a number of Vt's to be capable of storing same number of bits digital information without additional process steps.