Abstract: Face detection methods using voice are provided. The face detection method comprises the: receiving video data and voice data from a user terminal; deriving a first interval related to a predetermined message based on the received voice data; configuring a second interval based on the derived first interval; extracting a part of the video data corresponding to the second interval; deriving at least one video frame which satisfies a predetermined criterion from the extracted video data; and detecting a facial image included in each of the at least one derived video frame.

Abstract: A semiconductor light emitting device including a floating conductive pattern is provided. The semiconductor light emitting device includes a first semiconductor layer including a recessed region and a protruding region, an active layer and a second semiconductor layer disposed on the protruding region, a contact structure disposed on the second semiconductor layer, a lower insulating pattern covering the first semiconductor layer and the contact structure, and having first and second openings, a first conductive pattern disposed on the lower insulating pattern and extending into the first opening, a second conductive pattern disposed on the lower insulating pattern and extending into the second opening, and a floating conductive pattern disposed on the lower insulating pattern. The first and second conductive patterns and the floating conductive pattern have the same thickness on the same plane.

Abstract: A semiconductor light emitting device including a floating conductive pattern is provided. The semiconductor light emitting device includes a first semiconductor layer including a recessed region and a protruding region, an active layer and a second semiconductor layer disposed on the protruding region, a contact structure disposed on the second semiconductor layer, a lower insulating pattern covering the first semiconductor layer and the contact structure, and having first and second openings, a first conductive pattern disposed on the lower insulating pattern and extending into the first opening, a second conductive pattern disposed on the lower insulating pattern and extending into the second opening, and a floating conductive pattern disposed on the lower insulating pattern. The first and second conductive patterns and the floating conductive pattern have the same thickness on the same plane.

Abstract: A semiconductor light emitting device includes a semiconductor laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, the first conductive semiconductor layer and the active layer defining a first trench exposing a first portion of the first conductive semiconductor layer, and a second trench exposing a second portion of the first conductive semiconductor layer, a first finger electrode disposed in the exposed portion of the first conductive semiconductor layer in the first trench, an insulating layer disposed on an internal surface of the second trench, and a second finger electrode disposed on the insulating layer in the second trench and electrically connected to the second conductive semiconductor layer.

Abstract: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.

Abstract: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.

Abstract: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.

Abstract: A light emitting device (LED) package and a manufacturing method thereof are provided. The LED package includes a circuit board comprising at least one device region, a plurality of electrode regions, at least one first thermal via exposed through upper and lower surfaces of the at least one device region, and a plurality of second thermal vias exposed through upper and lower surfaces of the plurality of electrode regions; at least one first thermal pad bonded to the upper surface of the at least one device region and connected to the first thermal via; at least one LED mounted on the at least one first thermal pad; a plurality of first electrode pads bonded to the upper surface of the electrode region and connected to the second thermal vias; and a plurality of wires to connect the at least one LED with the plurality of first electrode pads.

Abstract: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.

Abstract: There are provided an optical lens and a light source module, and a street lamp having the same. The optical lens includes a concave dome shaped inner surface formed to have a similarly-oval shaped lower surface, and formed to include a plurality of light incident surfaces formed to be stepped along the inner surface thereof and stepped surfaces connecting the plurality of light incident surfaces to one another; and an outer surface formed to surround the inner surface.

Abstract: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.

Abstract: A light emitting device (LED) package and a manufacturing method thereof are provided. The LED package includes a circuit board comprising at least one device region, a plurality of electrode regions, at least one first thermal via exposed through upper and lower surfaces of the at least one device region, and a plurality of second thermal vias exposed through upper and lower surfaces of the plurality of electrode regions; at least one first thermal pad bonded to the upper surface of the at least one device region and connected to the first thermal via; at least one LED mounted on the at least one first thermal pad; a plurality of first electrode pads bonded to the upper surface of the electrode region and connected to the second thermal vias; and a plurality of wires to connect the at least one LED with the plurality of first electrode pads.

Abstract: Provided is a method of manufacturing an LED package, the method including preparing a mold die which includes an upper surface and a lower surface having an outer circumferential surface and a concave surface surrounded by the outer circumferential surface, the mold die having an outlet extending from the upper surface to the lower surface; preparing a base having a light emitting section formed therein; forming an inlet formed in a predetermined region of the base excluding the region where the light emitting section is formed; positioning the mold die on the light emitting section; forming a mold member by injecting a molding compound into the inlet of the base; and removing the mold die.

Abstract: There are provided an optical lens and a light source module, and a street lamp having the same. The optical lens includes a concave dome shaped inner surface formed to have a similarly-oval shaped lower surface, and formed to include a plurality of light incident surfaces formed to be stepped along the inner surface thereof and stepped surfaces connecting the plurality of light incident surfaces to one another; and an outer surface formed to surround the inner surface.

Abstract: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.

Abstract: A surface light source device using light emitting diodes, the device including: a housing having a top opening to emit light; a light emitting diode board disposed on an inner bottom surface of the housing, the board on which a plurality of light emitting diodes are arranged; and a color conversion laminate formed by depositing a plurality of phosphor-mixed resin layers containing phosphors, the layers disposed at a top of the opening of the housing and providing light having different wavelengths.

Abstract: Provided is a method of manufacturing an LED package, the method including preparing a mold die which includes an upper surface and a lower surface having an outer circumferential surface and a concave surface surrounded by the outer circumferential surface, the mold die having an outlet extending from the upper surface to the lower surface; preparing a base having a light emitting section formed therein; forming an inlet formed in a predetermined region of the base excluding the region where the light emitting section is formed; positioning the mold die on the light emitting section; forming a mold member by injecting a molding compound into the inlet of the base; and removing the mold die.

Abstract: The present invention relates to a yellow phosphor represented by a general formula of A(1-y)3D5-x Ex O12:Cey (wherein: A is at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm; D is at least one element selected from the group consisting of Al, Ga and In; E is at least one element selected from the group consisting of B and Fe; 0?x<0.5; and 0.0001?y<0.5), and a white semiconductor light emitting device incorporating the same. The white semiconductor light emitting device comprises a semiconductor light emitting diode, and a phosphor coating layer. The phosphor coating layer comprises yellow phosphor and optionally zinc selenium-based red phosphor that absorb a portion of light emitted by the semiconductor light emitting diode and emits light of wavelength different from that of the absorbed light and a transparent resin.

Abstract: Provided an LED package comprising a first package composed of a first region serving as a first electrode and a second region which is formed so as to overlap a portion of the first region, the second region defining a molding material filling cavity; one or more LED chips mounted on the first region of the first package; a second package formed under the second region of the first package, the second package being insulated by the first region and an insulating member so as to serve as a second electrode; conductive wire for electrically connecting the LED chips and the second package; and a molding material filled inside the second region of the first package so as to protect the LED chips and the conductive wire. The first and second packages are formed of aluminum.

Abstract: The present invention relates to a terbium borate-based yellow phosphor, a preparation method thereof, and a white semiconductor light emitting device incorporating the same. The terbium borate-based yellow phosphor of the present invention is represented by the general formula (Tb1-x-y-zREXAy)3DaBbO12:Cez (where, RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb; A is a typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr; D is a typical amphoteric element selected from the group consisting of Al, In and Ga; 0?x<0.5; 0?y<0.5; 0<z<0.5; 0<a<5; and 0<b<5). The white semiconductor light emitting device of the present invention comprises a semiconductor light emitting diode and the yellow phosphor, which absorbs a portion of light emitted by the semiconductor light emitting diode and emits light of wavelength different from that of the absorbed light.