Abstract: Disclosed is a semiconductor fabrication method comprising forming a under layer and a photoresist layer on a substrate, performing an optical proximity correction (OPC) on a layout, and using a photomask manufactured with the corrected layout to form a photoresist pattern on the under layer. The step of performing the OPC comprises generating a first function that comprises a first correction parameter, producing a resist image from the first function, measuring a target error for the resist image, and correcting the first correction parameter into a second correction parameter. The first correction parameter and the second correction parameter comprise a certain number of hydrogen radicals that migrate from the under layer to the photoresist layer.

Abstract: Provided is a method of optimizing an optical proximity correction (OPC) model, the method including: updating a kernel parameter of the OPC model including a linear combination of a kernel function; extracting a resist image by performing simulation on the OPC model, based on the updated kernel parameter; extracting first linear coefficients of the OPC model by executing Limited memory Broyden Fletcher Goldfarb Shanno with Bounds (L-BFGS-B) based on the resist image; and after the extracting of the first linear coefficients, extracting second linear coefficients of the OPC model by executing Inter Point Optimizer (IPO).