Abstract: Memory device and formation method are provided. The memory device includes a stack structure; and a plurality of gate line slit structures vertically extending through the stack structure to divide the stack structure into a plurality of stack portions. The plurality of GLS structures extend along a first direction in a lateral plane of the stack structure and are arranged along a second direction substantially perpendicular to the first direction. Each stack portion is between corresponding adjacent gate line slit structures. At least one edge stack portion, along the second direction of the plurality of stack portions at edge of the stack structure includes a configuration different from a non-edge stack portion of the plurality of stack portions along the second direction.

Abstract: A validity verification method and an intermediate server are provided. The method through the intermediate server includes receiving a request from one or more external platforms for accessing an operation server; connecting the one or more external platforms with the operation server; verifying validity of the request according to an external platform and an operation which the external platform is one of the one or more external platforms and identifies where the request is from, and the operation is requested to be accessed by the external platform; and after the request is verified, sending the request to the operation server.