Abstract: Disclosed is to a method and system for detecting microplastics with a small particle size, an electronic device and a medium.

Abstract: The present application provides a method for adjusting the local thickness of a photoresist, and a semiconductor front layer structure. The thickness of the photoresist layer in a first region of the stack structure is more than the thickness of the photoresist layer in a second region. The photomask is configured to include an auxiliary pattern for exposing the first region and another pattern for exposing the second region. The first region and the second region of the photoresist layer are exposed simultaneously by one photomask. The exposure intensity is adjusted so that part of the surface of the first region is dissolved during the development, the auxiliary pattern is not transferred to the photoresist layer in the first region, resulting in decreased thickness of the photoresist layer in the first region after development. After development, the other pattern is transferred to the photoresist layer in the second region.