Abstract: The present application discloses a pixel structure and method for the fabrication thereof including: providing a substrate; forming a black photoresist layer having a receiving cavity and an isolation region on the substrate; coating a polyelectrolyte solution on the surface of the black photoresist layer except the isolation region, and air-dried to form a polyelectrolyte layer; coating a metal nanoparticle solution on the surface of the polyelectrolyte layer, and air-dried to form a metal particle layer; and align and transferring a micro light emitting diodes to the black photoresist layer. In the above-described manner, the present disclosure can improve the light utilization efficiency of the micro light emitting diode.

Abstract: Provided are a micro light emitting diode display panel and a manufacturing method thereof, and the display panel comprising a substrate and a plurality of micro light emitting diodes, and the substrate comprising a plurality of sub pixel regions arranged in array, and each of the sub pixels being provided with a groove, and an inner surface of the groove being covered with a first reflective electrode and a second reflective electrode which are insulated from each other, and each of the micro light emitting diodes being arranged in one of the grooves, and one pin of the micro light emitting diode being connected with the first reflective electrode and the other pin being connected with the second reflective electrode, and the first reflective electrode and the second reflective electrode reflect light emitted from the micro light emitting diode back to the groove.

Abstract: The present disclosure provides a method for manufacturing quantum dot color film substrate and quantum dot color film substrate. The method is to form a quantum dot adhesive by mixing a red quantum dot material, a green quantum dot material and a photoinitiator in a thermosetting adhesive. The photoinitiator itself does not destroy fluorescence properties of quantum dot, but the photoinitiator is cleaved and can quenching the fluorescence of quantum dot after UV irradiation. A selective quenching quantum dot layer is obtained after coating a quantum dot adhesive uniformly on a color filter layer, and the light mask is used to irradiate the quantum dot adhesive on the blue sub-pixel region. Free radicals are generated by cleaving photoinitiator and are quenching the quantum dot material directly; the method is capable of meeting requirement of high gamut, simple preparation process and low cost.

Abstract: The invention discloses a QD CF substrate and manufacturing method thereof. The manufacturing method uses high power UV light irradiation on the QD material in the QD gel for prolonged period of time to perform selective quenching to obtain a selectively quenched QD layer, i.e., patterning the QD layer without etching process, achieve simplifying the QD CF substrate manufacturing process and reduce production cost. The QD CF substrate uses selectively quenched QD layer obtain by UV light irradiation technology to achieve improve the color gamut of display as well as simplifying manufacturing process. Moreover, the QD layer comprises no blue QD material, but uses blue backlight and organic transparent photo-resist layer to improve light utilization efficiency as well as reduce material cost.

Abstract: The present disclosure provides a method for manufacturing quantum dot color film substrate and quantum dot color film substrate. The method is to form a quantum dot adhesive by mixing a red quantum dot material, a green quantum dot material and a photoinitiator in a thermosetting adhesive. The photoinitiator itself does not destroy fluorescence properties of quantum dot, but the photoinitiator is cleaved and can quenching the fluorescence of quantum dot after UV irradiation. A selective quenching quantum dot layer is obtained after coating a quantum dot adhesive uniformly on a color filter layer, and the light mask is used to irradiate the quantum dot adhesive on the blue sub-pixel region. Free radicals are generated by cleaving photoinitiator and are quenching the quantum dot material directly; the method is capable of meeting requirement of high gamut, simple preparation process and low cost.

Abstract: The invention provides a manufacturing method of a quantum dot glue, a quantum dot glue and a quantum dot polarizer. In the manufacturing method, a polyvinyl alcohol glue is added with water-soluble quantum dot materials, and an alkaline solution is used to adjust its pH value to be above 7, so that a quantum dot glue is obtained, the manufacturing process is simple and the obtained quantum dot glue can be used for fabricating a quantum dot polarizer. The quantum dot polarizer is provided with a quantum dot glue layer formed by coating the quantum dot glue, since the quantum dot glue itself is alkaline, an alkali treatment process applied to a bonded layer is eliminated and thus can be directly coated, so that the manufacturing process is simplified. Moreover, since it is added with quantum dot materials, color gamut and display quality of display device can be improved.

Abstract: The present disclosure provides a method for manufacturing quantum dot color film substrate and quantum dot color film substrate. The method is to form a quantum dot adhesive by mixing a red quantum dot material, a green quantum dot material and a photoinitiator in a thermosetting adhesive. The photoinitiator itself does not destroy fluorescence properties of quantum dot, but the photoinitiator is cleaved and can quenching the fluorescence of quantum dot after UV irradiation. A selective quenching quantum dot layer is obtained after coating a quantum dot adhesive uniformly on a color filter layer, and the light mask is used to irradiate the quantum dot adhesive on the blue sub-pixel region. Free radicals are generated by cleaving photoinitiator and are quenching the quantum dot material directly; the method is capable of meeting requirement of high gamut, simple preparation process and low cost.

Abstract: The invention provides a liquid crystal display device, a liquid crystal display module and a liquid crystal cell thereof. The liquid crystal cell includes an upper substrate, a lower substrate, and a mixture of a quantum dot material and a liquid crystal material disposed between the upper substrate and the lower substrate. The quantum dot material includes a red quantum dot material and a green quantum dot material. A mass ratio of a total mixing amount of the two quantum dot materials occupied in a total mass of the mixture is 0.05˜5 wt %. As to the liquid crystal cell, the introduction of the QD material promotes the directional arrangement of liquid crystal molecules and thus plays a role of alignment; in another aspect, the liquid crystal cell being used in conjunction with a backlight source of blue or white LED can enhance the color gamut.

Abstract: The invention provides a manufacturing method of a quantum dot glue, a quantum dot glue and a quantum dot polarizer. In the manufacturing method, a polyvinyl alcohol glue is added with water-soluble quantum dot materials, and an alkaline solution is used to adjust its pH value to be above 7, so that a quantum dot glue is obtained, the manufacturing process is simple and the obtained quantum dot glue can be used for fabricating a quantum dot polarizer. The quantum dot polarizer is provided with a quantum dot glue layer formed by coating the quantum dot glue, since the quantum dot glue itself is alkaline, an alkali treatment process applied to a bonded layer is eliminated and thus can be directly coated, so that the manufacturing process is simplified. Moreover, since it is added with quantum dot materials, color gamut and display quality of display device can be improved.

Abstract: The disclosure provides a manufacture method of a quantum dot light-emitting diode display and a quantum dot light-emitting diode display. The manufacture method of a quantum dot light-emitting diode display provided by the disclosure forms a light-emitting layer by a quantum dot thin film prepared by filming a metal complex solution, compared with a conventional ink jet printing method with quantum dot ink, process parameters can be adjusted easily, a process can be simple, costs can be reduced, three primary colors R, G, B can be adjusted by precisely controlling sub pixel levels, a color film can be omitted, which can be a better industrial design in weight and thickness. According to the quantum dot light-emitting diode display provided by the disclosure, the light-emitting layer is formed by a quantum dot thin film, which can offer the quantum dot light-emitting diode display excellent quality in display, the process is simple.

Abstract: The disclosure provides a manufacture method of a quantum dot light-emitting diode display and a quantum dot light-emitting diode display. The manufacture method of a quantum dot light-emitting diode display provided by the disclosure forms a light-emitting layer by a quantum dot thin film prepared by filming a metal complex solution, compared with a conventional ink jet printing method with quantum dot ink, process parameters can be adjusted easily, a process can be simple, costs can be reduced, three primary colors R, G, B can be adjusted by precisely controlling sub pixel levels, a color film can be omitted, which can be a better industrial design in weight and thickness. According to the quantum dot light-emitting diode display provided by the disclosure, the light-emitting layer is formed by a quantum dot thin film, which can offer the quantum dot light-emitting diode display excellent quality in display, the process is simple.

Abstract: The invention discloses a QD CF substrate and manufacturing method thereof. The manufacturing method uses a patterned photo-resist layer as a masking layer to perform selective quenching on QD layer with a quencher to obtain selectively quenched QD layer, which simplifies QD CF substrate manufacturing process and reduces cost. The QD CF substrate does not use blue QD material in QD layer, but uses blue backlight and organic transparent photo-resist layer to improve light utilization efficiency and reduce material cost. The QD layer is a selectively quenched QD layer, and the portion of the QD layer located above the organic transparent photo-resist layer is quenched by the quencher, and will not emit light when excited by backlight. As such, the invention achieves using the QD material to improve color gamut and brightness, avoid color impurity at blue sub-pixels caused by light mixture, and the manufacturing method is simple.

Abstract: The invention discloses a QD CF substrate and manufacturing method thereof. The manufacturing method uses a patterned photo-resist layer as a masking layer to perform selective quenching on QD layer with a quencher to obtain selectively quenched QD layer, which simplifies QD CF substrate manufacturing process and reduces cost. The QD CF substrate does not use blue QD material in QD layer, but uses blue backlight and organic transparent photo-resist layer to improve light utilization efficiency and reduce material cost. The QD layer is a selectively quenched QD layer, and the portion of the QD layer located above the organic transparent photo-resist layer is quenched by the quencher, and will not emit light when excited by backlight. As such, the invention achieves using the QD material to improve color gamut and brightness, avoid color impurity at blue sub-pixels caused by light mixture, and the manufacturing method is simple.

Abstract: The present disclosure provides a method for manufacturing quantum dot color film substrate and quantum dot color film substrate. The method is to form a quantum dot adhesive by mixing a red quantum dot material, a green quantum dot material and a photoinitiator in a thermosetting adhesive. The photoinitiator itself does not destroy fluorescence properties of quantum dot, but the photoinitiator is cleaved and can quenching the fluorescence of quantum dot after UV irradiation. A selective quenching quantum dot layer is obtained after coating a quantum dot adhesive uniformly on a color filter layer, and the light mask is used to irradiate the quantum dot adhesive on the blue sub-pixel region. Free radicals are generated by cleaving photoinitiator and are quenching the quantum dot material directly; the method is capable of meeting requirement of high gamut, simple preparation process and low cost.

Abstract: The invention discloses a QD CF substrate and manufacturing method thereof. The manufacturing method uses high power UV light irradiation on the QD material in the QD gel for prolonged period of time to perform selective quenching to obtain a selectively quenched QD layer, i.e., patterning the QD layer without etching process, achieve simplifying the QD CF substrate manufacturing process and reduce production cost. The QD CF substrate uses selectively quenched QD layer obtain by UV light irradiation technology to achieve improve the color gamut of display as well as simplifying manufacturing process. Moreover, the QD layer comprises no blue QD material, but uses blue backlight and organic transparent photo-resist layer to improve light utilization efficiency as well as reduce material cost.