Patents by Inventor Dongzhen Jin

Dongzhen Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THIN FILM TRANSISTOR, GATE DRIVE ON ARRAY AND DISPLAY APPARATUS HAVING THE SAME, AND FABRICATING METHOD THEREOF
    Publication number: 20180212050
    Abstract: The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a first semiconductor region, a second semiconductor region, and a plurality of semiconductor bridges each of which connecting the first semiconductor region and the second semiconductor region; the plurality of semiconductor bridges spaced apart from each other; the active layer being made of a material including M1OaNb, wherein M1 is a single metal or a combination of metals, a>0, and b?0; an etch stop layer on a side of the active layer distal to the base substrate; the first semiconductor region having a first non-overlapping portion, a projection of which is outside that of the etch stop layer in plan view of the base substrate; the second semiconductor region having a second non-overlapping portion, a projection of which is outside that of the etch stop layer in plan view of the base substrate; a first electrode on a side of the first non-overlapping portion distal to the
    Type: Application
    Filed: July 8, 2016
    Publication date: July 26, 2018
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jaemoon Chung, Dongzhen Jin, Chao Fan, Rongge Cui
  • Thin film transistor, gate drive on array and display apparatus having the same, and fabricating method thereof
    Patent number: 10032917
    Abstract: The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a first semiconductor region, a second semiconductor region, and a plurality of semiconductor bridges each of which connecting the first semiconductor region and the second semiconductor region; the plurality of semiconductor bridges spaced apart from each other; the active layer being made of a material including M1OaNb, wherein M1 is a single metal or a combination of metals, a>0, and b?0; an etch stop layer on a side of the active layer distal to the base substrate; the first semiconductor region having a first non-overlapping portion, a projection of which is outside that of the etch stop layer in plan view of the base substrate; the second semiconductor region having a second non-overlapping portion, a projection of which is outside that of the etch stop layer in plan view of the base substrate; a first electrode on a side of the first non-overlapping portion distal to the
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: July 24, 2018
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jaemoon Chung, Dongzhen Jin, Chao Fan, Rongge Cui