Patents by Inventor Dongzhou DING

Dongzhou DING has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11567223
    Abstract: The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE2(1?x?y+?/2)Ce2xM(2y??)Si(1??)M?O5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0<x?0.05, the value of y is 0<y?0.015, and the value of ? is 0???10?4; and M is selected from at least one of tungsten, lead, molybdenum, tellurium, antimony, bismuth, mercury, silver, nickel, indium, thallium, niobium, titanium, tantalum, tin, cadmium, technetium, zirconium, rhenium, and gallium Ga.
    Type: Grant
    Filed: November 12, 2021
    Date of Patent: January 31, 2023
    Assignee: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Dongzhou Ding, Shuwen Zhao, Fan Yang, Junjie Shi, Chen Yuan, Linwei Wang, Zhongjun Xue
  • Publication number: 20220155470
    Abstract: The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE2(1?x?y+?/2)Ce2xM(2y??)Si(1??)M?O5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0<x?0.05, the value of y is 0<y?0.015, and the value of ? is 0???10?4; and M is selected from at least one of tungsten, lead, molybdenum, tellurium, antimony, bismuth, mercury, silver, nickel, indium, thallium, niobium, titanium, tantalum, tin, cadmium, technetium, zirconium, rhenium, and gallium Ga.
    Type: Application
    Filed: November 12, 2021
    Publication date: May 19, 2022
    Inventors: Dongzhou DING, Shuwen Zhao, Fan YANG, Junjie SHI, Chen YUAN, Linwei WANG, Zhongjun XUE