Abstract: A magnetic memory device and a method to make the device is disclosed. The magnetic memory device comprises a free magnetic layer that includes a hard magnetic material layer, a soft magnetic material layer and a coupling layer that is between the hard magnetic material layer and the soft magnetic material layer. The coupling layer comprises a magnetic material that has oxidized edges. In one embodiment, the magnetic material of the coupling layer comprises a Heusler alloy or a silicon-based magnetic material. A predetermined amount of the coupling layer is oxidized to controllably reduce the switching current Jc0 of the free magnetic layer to be about half of the switching current if the coupling layer comprised substantially all magnetic material and no oxide.

Abstract: A method for providing magnetic junctions is described. Each magnetic junction includes a free layer. A first portion of a stack for the magnetic junctions is provided. The first portion of a stack includes magnetic layer(s) for the free layer. A hard mask is provided. The hard mask covers a part of the first portion of the stack corresponding to the magnetic junctions. The hard mask includes aperture(s) exposing a second part of the first portion of the stack corresponding to spacing(s) between the magnetic junctions. The spacing(s) are not more than fifty nanometers. The second part of the first portion of the stack is etched. A remaining part of the first portion of the stack forms a first portion of each magnetic junction. This first portion of each magnetic junction includes the free layer. A second portion of the stack for the magnetic junctions is also provided.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes a [CoxFeyBz]uMot layer, where u+t=1, x+y+z=1 and u, t, x, y and z are each nonzero. The [CoxFeyBz]uMot layer has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes a [CoxFeyBz]uMot layer, where u+t=1, x+y+z=1 and u, t, x, y and z are each nonzero. The [CoxFeyBz]uMot layer has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes an alloy. The alloy includes [CoxFeyBz]uMgt, where u+t=1 and x+y+z=1.

Abstract: A method for providing magnetic junctions is described. Each magnetic junction includes a free layer. A first portion of a stack for the magnetic junctions is provided. The first portion of a stack includes magnetic layer(s) for the free layer. A hard mask is provided. The hard mask covers a part of the first portion of the stack corresponding to the magnetic junctions. The hard mask includes aperture(s) exposing a second part of the first portion of the stack corresponding to spacing(s) between the magnetic junctions. The spacing(s) are not more than fifty nanometers. The second part of the first portion of the stack is etched. A remaining part of the first portion of the stack forms a first portion of each magnetic junction. This first portion of each magnetic junction includes the free layer. A second portion of the stack for the magnetic junctions is also provided.

Abstract: A magnetic memory device and a method to make the device is disclosed. The magnetic memory device comprises a free magnetic layer that includes a hard magnetic material layer, a soft magnetic material layer and a coupling layer that is between the hard magnetic material layer and the soft magnetic material layer. The coupling layer comprises a magnetic material that has oxidized edges. In one embodiment, the magnetic material of the coupling layer comprises a Heusler alloy or a silicon-based magnetic material. A predetermined amount of the coupling layer is oxidized to controllably reduce the switching current Jc0 of the free magnetic layer to be about half of the switching current if the coupling layer comprised substantially all magnetic material and no oxide.