Patents by Inventor Donna M. Lennon

Donna M. Lennon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for modulation using a conductive waveguide
    Patent number: 8818150
    Abstract: Method and apparatus for modulation of both the intensity and the polarization of radiation in silicon waveguides by applying a biasing voltage to the waveguide.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: August 26, 2014
    Assignee: Massachusetts Institute of Technology
    Inventors: Matthew E. Grein, Theodore M. Lyszczarz, Michael W. Geis, Steven J. Spector, Donna M. Lennon, Yoon Jung
  • System and method for providing a high frequency response silicon photodetector
    Patent number: 7880204
    Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
    Type: Grant
    Filed: October 2, 2006
    Date of Patent: February 1, 2011
    Assignee: Massachusetts Institute of Technology
    Inventors: Michael W. Geis, Steven J. Spector, Donna M. Lennon, Matthew E. Grein, Robert T. Schulein, Jung U. Yoon, Franz Xaver Kaertner, Fuwan Gan, Theodore M. Lyszczarz
  • System and method for providing a high frequency response silicon photodetector
    Publication number: 20100025787
    Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
    Type: Application
    Filed: October 2, 2006
    Publication date: February 4, 2010
    Applicant: Massachusetts Institute of Technology
    Inventors: Michael W. Geis, Steven J. Spector, Donna M. Lennon, Matthew E. Grein, Robert T. Schulein, Jung U. Yoon, Franz Xaver Kaertner, Fuwan Gan, Theodore M. Lyszczarz